Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

Selçuk, E Ekber
Hamhuis, GJ Rian
Nötzel, R Richard

Open link

Publication date

January 2010

DOI

10.1063/1.3295544

Publisher

AIP Publishing

Citation count (estimate)

Abstract

Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity sensor applications

Extracted data

We use cookies to provide a better user experience.

Data Protection

Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

Abstract

Extracted data

Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

Abstract

Extracted data

Related items

Related items