Plasma accumulation effects in Extreme Ultra-Violet generated plasmas

In order to meet the demand of increasing computer speed and memory capacity, industries are striving to reduce the size of computer chips. This miniaturization can be achieved by reducing the wavelength in lithography machines to Extreme Ultra-Violet (EUV, 92 eV). The low-pressure (around 1 Pa) transparent background gas (e.g. H2 and He) in the lithography machine is partially ionized by the absorption of EUV photons. The study of these low-density 1E15 m^-3 pulsed plasmas is interesting and experimentally challenging. The electron density is measured with microwave cavity resonance spectroscopy (MCRS). In MCRS measurements the resonance frequency in a cavity is determined, this frequency depends on the electron density in the cavity. In this research the plasma accumulation is studied in an EUV-generated plasma in argon. The EUV source generates EUV pulses with a repetition frequency between 500 Hz and 10 kHz. The accumulation of plasma is clearly observed at frequencies above 1 kHz