A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 °C and a thermo-optic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz
We review our work on SOI and Ge-on-SOI PICs for the mid-infrared. We demonstrate the integration of...
We report widely tunable III-V-on-silicon lasers with more than 40 nm tuning range near 2.35 mu m wa...
International audienceIn this paper, we demonstrate for the first time the integration of a III-V/Si...
A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a...
This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on ...
International audienceWith an ever-growing transmission data rate, electronic components reach a lim...
In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrat...
Semiconductor tunable diode lasers have applications in various fields such as spectroscopy, remote ...
This paper reports on recent advances on integrated hybrid InP/SOI lasers and transmitters. Based on...
Integrating III-V gain material with silicon photonic integrated circuits enables the realization of...
International audienceWe report on the design, fabrication and performance of the first hetero-integ...
A 4-channel multi-wavelength laser integrated on a silicon waveguide circuit is realized. Waveguide-...
We demonstrate a narrow-linewidth heterogeneously integrated silicon/III-V laser based on the oxide-...
In this work we present the first experimental demonstration of a novel class of heterogeneously int...
In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrat...
We review our work on SOI and Ge-on-SOI PICs for the mid-infrared. We demonstrate the integration of...
We report widely tunable III-V-on-silicon lasers with more than 40 nm tuning range near 2.35 mu m wa...
International audienceIn this paper, we demonstrate for the first time the integration of a III-V/Si...
A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a...
This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on ...
International audienceWith an ever-growing transmission data rate, electronic components reach a lim...
In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrat...
Semiconductor tunable diode lasers have applications in various fields such as spectroscopy, remote ...
This paper reports on recent advances on integrated hybrid InP/SOI lasers and transmitters. Based on...
Integrating III-V gain material with silicon photonic integrated circuits enables the realization of...
International audienceWe report on the design, fabrication and performance of the first hetero-integ...
A 4-channel multi-wavelength laser integrated on a silicon waveguide circuit is realized. Waveguide-...
We demonstrate a narrow-linewidth heterogeneously integrated silicon/III-V laser based on the oxide-...
In this work we present the first experimental demonstration of a novel class of heterogeneously int...
In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrat...
We review our work on SOI and Ge-on-SOI PICs for the mid-infrared. We demonstrate the integration of...
We report widely tunable III-V-on-silicon lasers with more than 40 nm tuning range near 2.35 mu m wa...
International audienceIn this paper, we demonstrate for the first time the integration of a III-V/Si...