We report an approach to improve the noise performance of RF low noise amplifiers (LNAs) and down-conversion mixers. The technique we described here is based on capacitive cross-coupling across the two sides of a differential input stage. A LNA and mixer have been implemented in 0.5µ CMOS process to demonstrate the viability of this technique. The measurements show that the LNA achieves 3.0dB noise figure and 12.2 dB voltage gain (optimized for the maximum power transfer), and the mixer has 5.2dB DSB noise figure and 13.2 dB voltage conversion gain. Both LNA and mixer operate at 2.7V voltage supply and consume 27mW and 8.1mW power, respectively
This paper proposes three types of single stage low-power RF front-end, called double-balanced LMVs,...
A dual-band CMOS front-end was designed and fabricated in a 0.18 μm CMOS process. The front-end empl...
This paper describes a fully integrated low noise amplifier (LNA) + mixer + first filtering stage, s...
We report an approach to improve the noise performance of RF low noise amplifiers (LNAs) and down-co...
We report an approach to improve the noise performance of RF low noise amplifiers (LNAs) and down-co...
A 900MHz high linearity low power and low noise mixer is designed in TSMC 0.18-mu m CMOS process. By...
The trend in cellular chipset design today is to incorporate support for a larger number of frequenc...
In the radio frequency (RF) front-end, LNA with good noise figure without degrading performance a ve...
The scaling of CMOS technologies has a great impact on analog and radio-frequency (RF) circuit desig...
Abstract—A CMOS low-voltage downconversion mixer is pre-sented. With 1.69-GHz local oscillator signa...
This paper presents the design theory of conventional single-ended LNA and differential LNA based on...
In many designs, a low supply voltage is selected for efficient use of power. However, this often le...
The recent upsurge in the demand for low-power portable wireless communication products creates a lo...
©2005 COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract...
The conventional common-gate low-noise amplifier (CGLNA) exhibits a relatively high noise figure (NF...
This paper proposes three types of single stage low-power RF front-end, called double-balanced LMVs,...
A dual-band CMOS front-end was designed and fabricated in a 0.18 μm CMOS process. The front-end empl...
This paper describes a fully integrated low noise amplifier (LNA) + mixer + first filtering stage, s...
We report an approach to improve the noise performance of RF low noise amplifiers (LNAs) and down-co...
We report an approach to improve the noise performance of RF low noise amplifiers (LNAs) and down-co...
A 900MHz high linearity low power and low noise mixer is designed in TSMC 0.18-mu m CMOS process. By...
The trend in cellular chipset design today is to incorporate support for a larger number of frequenc...
In the radio frequency (RF) front-end, LNA with good noise figure without degrading performance a ve...
The scaling of CMOS technologies has a great impact on analog and radio-frequency (RF) circuit desig...
Abstract—A CMOS low-voltage downconversion mixer is pre-sented. With 1.69-GHz local oscillator signa...
This paper presents the design theory of conventional single-ended LNA and differential LNA based on...
In many designs, a low supply voltage is selected for efficient use of power. However, this often le...
The recent upsurge in the demand for low-power portable wireless communication products creates a lo...
©2005 COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract...
The conventional common-gate low-noise amplifier (CGLNA) exhibits a relatively high noise figure (NF...
This paper proposes three types of single stage low-power RF front-end, called double-balanced LMVs,...
A dual-band CMOS front-end was designed and fabricated in a 0.18 μm CMOS process. The front-end empl...
This paper describes a fully integrated low noise amplifier (LNA) + mixer + first filtering stage, s...