Add to ORKGSRAM cell stability has become an important design and test issue owing to significant process spreads, non-ideal operational conditions, and subtle manufacturing defects in scaled-down geometries. In this article, we carry out an extensive SRAM SNM sensitivity analysis and propose an SRAM cell stability fault model for weak cell detection. This fault model is used to design and verify a proposed digitally programmable design-for-test (DFT) technique targeting the weak cell detection in embedded SRAMs (eSRAM)
Resistive Random Access Memory (RRAM) is one of the emerging memory devices that possesses a combi...
In this paper, we present a novel study on Data Retention Faults (DRFs) in SRAM memories. We analyze...
Manufacturing defects can cause faults in FinFET SRAMs. Of them, easy-to-detect (ETD) faults always ...
SRAM cell stability has become an important design and test issue owing to significant process sprea...
SRAM cell stability has become an important design and test issue owing to significant process sprea...
Embedded SRAM bit count is constantly growing limiting yield in systems-on-chip (SoCs). As technolog...
Stability testing of SRAMs has been time consuming. This paper presents a new programmable DFT techn...
Abstract—Core-cell stability represents the ability of the core-cell to keep the stored data. With t...
Reliable cell stability test of modern embedded SRAMs calls for DFT techniques with a flexible detec...
Hard-to-detect faults such as weak and random faults in FinFET SRAMs represent an important challeng...
Abstract—With increasing inter-die and intra-die parameter variations in sub-100-nm process technolo...
In this thesis the importance of DFTs in the detection of DRFs in embedded SRAMs have been presented...
We propose a methodology for systematically injecting defects into an SRAM and simulating the effect...
International audienceIn today's electronic designs, more and more memories are embedded in a single...
The shrinking of technology nodes has led to high density memories containing large amounts of trans...
Resistive Random Access Memory (RRAM) is one of the emerging memory devices that possesses a combi...
In this paper, we present a novel study on Data Retention Faults (DRFs) in SRAM memories. We analyze...
Manufacturing defects can cause faults in FinFET SRAMs. Of them, easy-to-detect (ETD) faults always ...
SRAM cell stability has become an important design and test issue owing to significant process sprea...
SRAM cell stability has become an important design and test issue owing to significant process sprea...
Embedded SRAM bit count is constantly growing limiting yield in systems-on-chip (SoCs). As technolog...
Stability testing of SRAMs has been time consuming. This paper presents a new programmable DFT techn...
Abstract—Core-cell stability represents the ability of the core-cell to keep the stored data. With t...
Reliable cell stability test of modern embedded SRAMs calls for DFT techniques with a flexible detec...
Hard-to-detect faults such as weak and random faults in FinFET SRAMs represent an important challeng...
Abstract—With increasing inter-die and intra-die parameter variations in sub-100-nm process technolo...
In this thesis the importance of DFTs in the detection of DRFs in embedded SRAMs have been presented...
We propose a methodology for systematically injecting defects into an SRAM and simulating the effect...
International audienceIn today's electronic designs, more and more memories are embedded in a single...
The shrinking of technology nodes has led to high density memories containing large amounts of trans...
Resistive Random Access Memory (RRAM) is one of the emerging memory devices that possesses a combi...
In this paper, we present a novel study on Data Retention Faults (DRFs) in SRAM memories. We analyze...
Manufacturing defects can cause faults in FinFET SRAMs. Of them, easy-to-detect (ETD) faults always ...