MM20 HVMOS Model : a surface-potential-based LDMOS model for circuit simulation (Chapter 3)

MOS Model 20 is an advanced public-domain compact LDMOS model, to be used for circuit simulation of high-voltage IC-designs. By combining the description of the MOSFET channel region with that for the drift region of an LDMOS device, MOS Model 20 includes all specific high-voltage aspects into one model. This chapter presents the physical background of the model, the model parameter extraction strategy, and ends with the verification in comparison to dc- and ac-measurements