Add to ORKGIn highly doped thin semiconductor layers one often observes generation-recombination (g-r) noise with a broadened Lorentzian-like spectrum. In a theoretical analysis we have shown that such a spectrum can be ascribed to g-r processes between conduction band and monoenergetic traps in the edge of the layers
The measurements of 1/f noise in the weak-alloyed n-GaAs in the geometric magnetoresistance and heat...
The low-frequency noise in strained and relaxed Ge pMOSFETs is characterized to investigate more clo...
Low-frequency electronic noise, also referred to as excess noise, is present in almost all electroni...
In highly doped thin semiconductor layers one often observes generation-recombination (g-r) noise wi...
Low-frequency noise measurements are performed on heavily doped p-type GaAs transmission line models...
We examine different approaches to the analysis of noise in amorphous hydrogenated silicon associate...
The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined ...
We examine several analytical models with different predictions for noise associated with conductivi...
Fundamental aspects of the $p{-}n$ junction have been considered in order to obtain an analytical mo...
A statistical treatment is given of the generation-recombination noise in a semiconductor with a con...
International audiencea eddy.simoen@imec.be, b bogdan.cretu@ensicaen.fr, c fangwen@ime.ac.cn, d marc...
We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si:P and Ge:P δ...
We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si: P and Ge: P del...
Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenat...
The standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an I...
The measurements of 1/f noise in the weak-alloyed n-GaAs in the geometric magnetoresistance and heat...
The low-frequency noise in strained and relaxed Ge pMOSFETs is characterized to investigate more clo...
Low-frequency electronic noise, also referred to as excess noise, is present in almost all electroni...
In highly doped thin semiconductor layers one often observes generation-recombination (g-r) noise wi...
Low-frequency noise measurements are performed on heavily doped p-type GaAs transmission line models...
We examine different approaches to the analysis of noise in amorphous hydrogenated silicon associate...
The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined ...
We examine several analytical models with different predictions for noise associated with conductivi...
Fundamental aspects of the $p{-}n$ junction have been considered in order to obtain an analytical mo...
A statistical treatment is given of the generation-recombination noise in a semiconductor with a con...
International audiencea eddy.simoen@imec.be, b bogdan.cretu@ensicaen.fr, c fangwen@ime.ac.cn, d marc...
We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si:P and Ge:P δ...
We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si: P and Ge: P del...
Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenat...
The standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an I...
The measurements of 1/f noise in the weak-alloyed n-GaAs in the geometric magnetoresistance and heat...
The low-frequency noise in strained and relaxed Ge pMOSFETs is characterized to investigate more clo...
Low-frequency electronic noise, also referred to as excess noise, is present in almost all electroni...