TiO2 is a widely studied material due to its optical and photocatalytic properties and its hydrophilic nature after prolonged UV exposure. When synthesized by atomic layer deposition (ALD) the TiO2 can be deposited with ultimate growth control with a high conformality on demanding topologies and even at room temperature when e.g. using a plasma based process. We report on the deposition of TiO2 films using remote plasma ALD with titanium (IV) isopropoxide as precursor and O2 plasma as oxidant. Stochiometric TiO2 films with carbon and hydrogen levels below the detection limit of Rutherford backscattering/elastic recoil detection (<2 at.%) have been deposited within the temperature range of 25°C to 300°C. Depending on the ALD conditions an...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceAtomic layer deposition (ALD) of TiO2 thin films on a Si substrate has been in...
TiO2 is a widely studied material due to its optical and photocatalytic properties and its hydrophil...
TiO2 is a widely studied material due to its optical and photocatalytic properties and its hydrophil...
TiO2 is a widely studied material due to its optical and photocatalytic properties and its hydrophil...
Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide ...
Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide ...
Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide ...
The thin films ceramic oxide can be fabricated by ALD because this technique promises to control the...
The thin films ceramic oxide can be fabricated by ALD because this technique promises to control the...
The influence of the oxygen plasma parameters on the morphology and optical properties of TiO2 thin ...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceAtomic layer deposition (ALD) of TiO2 thin films on a Si substrate has been in...
TiO2 is a widely studied material due to its optical and photocatalytic properties and its hydrophil...
TiO2 is a widely studied material due to its optical and photocatalytic properties and its hydrophil...
TiO2 is a widely studied material due to its optical and photocatalytic properties and its hydrophil...
Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide ...
Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide ...
Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide ...
The thin films ceramic oxide can be fabricated by ALD because this technique promises to control the...
The thin films ceramic oxide can be fabricated by ALD because this technique promises to control the...
The influence of the oxygen plasma parameters on the morphology and optical properties of TiO2 thin ...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
International audienceAtomic layer deposition (ALD) of TiO2 thin films on a Si substrate has been in...