Infrared spectroscopy was used to obtain absolute number information on the reaction products during atomic layer deposition of Pt from (methylcyclopentadienyl)trimethylplatinum [(MeCp)PtMe3] and O2. From the detection of CO2 and H2O it was established that the precursor ligands are oxidatively decomposed during the O2 pulse mainly. Oxygen atoms chemisorbed at the Pt lead to likewise ligand oxidation during the (MeCp)PtMe3 pulse however the detection of a virtually equivalent density of CO2 and CH4 also reveals a concurrent ligand liberation reaction. The surface coverage of chemisorbed oxygen atoms found is consistent with the saturation coverage reported in surface science studies
Atomic layer deposition (ALD) processes of noble metals are gaining increasing interest for applicat...
The surface reaction products liberated during the atomic layer deposition (ALD) of Ru from (C5H5)Ru...
The interaction of gas-phase H atoms with ordered and disordered adlayers of atomic oxygen, hydroxyl...
Infrared spectroscopy was used to obtain absolute number information on the reaction products during...
Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclope...
The mechanism of platinum atomic layer deposition using (methylcyclopentadienyl)trimethylplatinum a...
The growth of supported Pt nanoparticles at room temperature employing a three-step atomic layer dep...
Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclope...
A detailed understanding of the growth of noble metals by atomic layer deposition (ALD) is key for v...
Using different isotopologues of the reactant gases CO and O2, infrared reflection absorption spectr...
Using different isotopologues of the reactant gases CO and O2, infrared reflection absorption spectr...
Using different isotopologues of the reactant gases CO and O-2, infrared reflection absorption spect...
Atomic layer deposition (ALD) processes of noble metals are gaining increasing interest for applicat...
The surface reaction products liberated during the atomic layer deposition (ALD) of Ru from (C5H5)Ru...
The interaction of gas-phase H atoms with ordered and disordered adlayers of atomic oxygen, hydroxyl...
Infrared spectroscopy was used to obtain absolute number information on the reaction products during...
Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclope...
The mechanism of platinum atomic layer deposition using (methylcyclopentadienyl)trimethylplatinum a...
The growth of supported Pt nanoparticles at room temperature employing a three-step atomic layer dep...
Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclope...
A detailed understanding of the growth of noble metals by atomic layer deposition (ALD) is key for v...
Using different isotopologues of the reactant gases CO and O2, infrared reflection absorption spectr...
Using different isotopologues of the reactant gases CO and O2, infrared reflection absorption spectr...
Using different isotopologues of the reactant gases CO and O-2, infrared reflection absorption spect...
Atomic layer deposition (ALD) processes of noble metals are gaining increasing interest for applicat...
The surface reaction products liberated during the atomic layer deposition (ALD) of Ru from (C5H5)Ru...
The interaction of gas-phase H atoms with ordered and disordered adlayers of atomic oxygen, hydroxyl...