By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5nm)/tris(8- hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of magnetoresistance at the onset of multiple-step tunneling. In the regime of multiple-step tunneling, under the condition of low hopping rates, spin precession in the presence of hyperfine coupling is conjectured to be the relevant source of spin relaxation. A quantitative analysis leads to the prediction of a symmetric magnetoresistance around zero magnetic field in addition to the hysteretic magnetoresistance curves, which are indeed observed in our experime...
Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers ...
Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers ...
Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers ...
By combining experiments with simple model calculations, we obtain new insight in spin transport thr...
By combining experiments with simple model calculations, we obtain new insight in spin transport thr...
By combining experiments with simple model calculations, we obtain new insight in spin transport thr...
By combining experiments with simple model calculations, we obtain new insight in spin transport thr...
Carbon-based, molecular semiconductors offer several attractive attributes for spintronics, such as ...
Spin injection/detection in an all-organic-based spin valve is experimentally demonstrated. The magn...
We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8- hydro...
We have demonstrated modeling of phonon and defect-induced spin relaxation length (LS) in Fe3O4 and ...
Journal ArticleWe fabricated spin-valve devices made of organic semiconductor thin films sandwiched ...
The observations of both positive and negative signs in tunneling magnetoresistance (TMR) for the sa...
The ability to manipulate electron spin in organic molecular materials offers a new and extremely ta...
The understanding of magnetoresistance (MR) in organic spin valves (OSVs) based on molecular semicon...
Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers ...
Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers ...
Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers ...
By combining experiments with simple model calculations, we obtain new insight in spin transport thr...
By combining experiments with simple model calculations, we obtain new insight in spin transport thr...
By combining experiments with simple model calculations, we obtain new insight in spin transport thr...
By combining experiments with simple model calculations, we obtain new insight in spin transport thr...
Carbon-based, molecular semiconductors offer several attractive attributes for spintronics, such as ...
Spin injection/detection in an all-organic-based spin valve is experimentally demonstrated. The magn...
We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8- hydro...
We have demonstrated modeling of phonon and defect-induced spin relaxation length (LS) in Fe3O4 and ...
Journal ArticleWe fabricated spin-valve devices made of organic semiconductor thin films sandwiched ...
The observations of both positive and negative signs in tunneling magnetoresistance (TMR) for the sa...
The ability to manipulate electron spin in organic molecular materials offers a new and extremely ta...
The understanding of magnetoresistance (MR) in organic spin valves (OSVs) based on molecular semicon...
Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers ...
Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers ...
Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers ...