Comparison of Photovoltaic panel’s standard and simplified models

Shockley diode equation is basic for single diode model equation, which is overly used for characterizing the photovoltaic cell output and behavior. In the standard equation, it includes series resistance (Rs) and shunt resistance (Rsh) with different types of parameters. Maximum simulation and modeling work done previously, related to single diode photovoltaic cell used this equation. However, there is another form of the standard equation which has not included Series Resistance (Rs) and Shunt Resistance (Rsh) yet, as the Shunt Resistance is much bigger than the load resistance and the load resistance is much bigger than the Series Resistance. For this phenomena, very small power loss occurs within a photovoltaic cell. This research focuses on the comparison of two forms of basic Shockley diode equation. This analysis describes a deep understanding of the photovoltaic cell, as well as gives understanding about Series Resistance (Rs) and Shunt Resistance (Rsh) behavior in the Photovoltaic cell. For making estimation of a real time photovoltaic system, faster calculation is needed. The equation without Series Resistance and Shunt Resistance is appropriate for the real time environment. Error function for both Series resistance (Rs) and Shunt resistances (Rsh) have been analyzed which shows that the total system is not affected by this two parameters' behavior.The first author would like to thank the FUSION (Featured eUrope and South asIa mObility Network) Erasmus Mundus project for funding the scholarship and to ICT of University of Évora for enabling this work. The second author gratefully acknowledges the financial support of “Fundação para a Ciência e Tecnologia” (FCT – Portugal), through the Doctoral Grant SFRH/BD/108484/2015. The fourth author like to thank the Leader Erasmus Mundus project for funding the scholarship and to ICT University of Évora for enabling this work The work is also co-funded by the European Union through the European Regional Development Fund, included in the COMPETE 2020 (Operational Program Competitiveness and Internationalization) through the ICT project (UID /GEO/04683/2013) with the reference POCI-01-0145-FEDER-007690