We report the first room temperature quantum dot (QD) vertical-external-cavity surface-emitting laser operating at 1305 nm. The gain structure was composed of 5 × 3 QD layers; each threefold group was positioned at an antinode of the standing wave of the optical field. Continuous wave optical output power >0.5 mW with threshold pump power of 21 mW was demonstrated using a very simple and compact laser configuration by employing a high reflection-coated fiber as the top mirror. Using a piezoelectric translation stage, the emission wavelength could be tuned over a 14-nm spectral range
A semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by mole...
Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at roo...
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (...
We report on a record-high output power from an optically pumped quantum-dot vertical-external-cavit...
A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 m...
International audienceA high-power InAs quantum dot (QDs) vertical-external-cavity surface-emitting ...
A membrane external-cavity surface-emitting laser (MECSEL) with an InAs/InP quantum dot (QD) based g...
International audienceWe present the first demonstration of a vertical cavity surface emitting laser...
We report the first quantum dot semiconductor disk laser operating at 1300 nm under continuous optic...
Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to the...
Edge-emitting semiconductor lasers with self-assembled InAs quantum dot (QD) active regions have dem...
International audienceWe report high-power second-harmonic generation of 760 nm laser light from opt...
We present the 1.3-μm InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with no...
International audienceAn Optically-Pumped InAs Quantum Dash-based Vertical-External-Cavity Surface-E...
textDue to quantum dots’ atom-like density of states, quantum dot lasers have been expected to exhi...
A semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by mole...
Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at roo...
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (...
We report on a record-high output power from an optically pumped quantum-dot vertical-external-cavit...
A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 m...
International audienceA high-power InAs quantum dot (QDs) vertical-external-cavity surface-emitting ...
A membrane external-cavity surface-emitting laser (MECSEL) with an InAs/InP quantum dot (QD) based g...
International audienceWe present the first demonstration of a vertical cavity surface emitting laser...
We report the first quantum dot semiconductor disk laser operating at 1300 nm under continuous optic...
Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to the...
Edge-emitting semiconductor lasers with self-assembled InAs quantum dot (QD) active regions have dem...
International audienceWe report high-power second-harmonic generation of 760 nm laser light from opt...
We present the 1.3-μm InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with no...
International audienceAn Optically-Pumped InAs Quantum Dash-based Vertical-External-Cavity Surface-E...
textDue to quantum dots’ atom-like density of states, quantum dot lasers have been expected to exhi...
A semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by mole...
Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at roo...
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (...