Add to ORKGInxGa1-xAs/GaAs1-yBiy/InxGa1-xAs (0.20 ≤x ≤0.22, 0.035 ≤y ≤0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k • p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μ
Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on variou...
The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structure...
Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecu...
InxGa1-xAs/GaAs1-yBiy/InxGa1-xAs (0.20 ≤x ≤0.22, 0.035 ≤y ≤0.045) quantum wells (QWs) were grown on ...
Photoluminescence (PL) properties of In0.2Ga0.8As/GaAs0.96Bi0.04/In0.2Ga0.8As quantum well (QW) grow...
We propose a new type II InGaAs/GaAsBi quantum well structure to extend light emission wavelength on...
We propose a new type II InGaAs/GaAsBi quantum well structure to extend light emission wavelength on...
We report a systematical study on the molecular beam epitaxy growth and optical property of (GaAs1-x...
Molecular beam epitaxy (MBE) growth of (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum well (BQW) struc...
Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum wells (BQWs) grown by molecu...
The potential to extend the emission wavelength of photonic devices further into the near- and midin...
The potential to extend the emission wavelength of photonic devices further into the near- and midin...
experimental measurements and theoretical calculationsThe potential to extend the emission wavelengt...
Photoluminescence (PL) properties of In0.2Ga0.8As/GaAs0.96Bi0.04/In0.2Ga0.8As quantum well (QW) grow...
Optical gains of type-II InGaAs/GaAsBi quantum wells (QWs) with W, N, and M shapes are analyzed theo...
Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on variou...
The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structure...
Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecu...
InxGa1-xAs/GaAs1-yBiy/InxGa1-xAs (0.20 ≤x ≤0.22, 0.035 ≤y ≤0.045) quantum wells (QWs) were grown on ...
Photoluminescence (PL) properties of In0.2Ga0.8As/GaAs0.96Bi0.04/In0.2Ga0.8As quantum well (QW) grow...
We propose a new type II InGaAs/GaAsBi quantum well structure to extend light emission wavelength on...
We propose a new type II InGaAs/GaAsBi quantum well structure to extend light emission wavelength on...
We report a systematical study on the molecular beam epitaxy growth and optical property of (GaAs1-x...
Molecular beam epitaxy (MBE) growth of (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum well (BQW) struc...
Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum wells (BQWs) grown by molecu...
The potential to extend the emission wavelength of photonic devices further into the near- and midin...
The potential to extend the emission wavelength of photonic devices further into the near- and midin...
experimental measurements and theoretical calculationsThe potential to extend the emission wavelengt...
Photoluminescence (PL) properties of In0.2Ga0.8As/GaAs0.96Bi0.04/In0.2Ga0.8As quantum well (QW) grow...
Optical gains of type-II InGaAs/GaAsBi quantum wells (QWs) with W, N, and M shapes are analyzed theo...
Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on variou...
The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structure...
Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecu...