We present reflectance anisotropy spectra in the energy range 1.0-5.5 eV, measured for cleaved III-V surfaces after adsorption of caesium. In such a system Cs forms one-dimensional wire-like structures at low Cs coverages (Θ≪ 1 ML). The formation of these Cs wires leads to characteristic changes in the reflectance anisotropy spectra of the cleaved surface such as a minimum between the E0 and E1 bulk critical points of the substrate. For higher coverages the development of a two-dimensional layer can be optically monitored, as can the gradual transition to a three-dimensional disordered layer close to the saturation coverage
We present a high-resolution ultraviolet photoelectron spectroscopy study of the room temperature Cs...
The growth of thin indium-layers on the GaAs(100) As-rich (2 x 4)/c(2 x 8) surface has been investig...
Reflectance anisotropy spectra of Cu and Ag (110) surfaces are obtained by ab initio calculations. W...
We present reflectance anisotropy spectra in the energy range 1.0-5.5 eV, measured for cleaved III-V...
Upon adsorption of Cs, the As-rich c(2 X 8)/(2 X 4) reconstruction of GaAs(001) is found to exhibit ...
Upon adsorption of Cs, the As-rich c(2×8)/(2×4) reconstruction of GaAs(001) is found to exhibit an i...
We present calculated and measured reflectance anisotropy spectra (RAS) in the energy range from 1 t...
The optical properties of the GaAs(110) surface are studied by means of self-consistent local-densit...
The creation of nanometre-scale patterns by self organization is of great interest, because of its p...
The creation of nanometre-scale patterns by self organization is of great interest, because of its p...
With mid-infrared spectroscopy at room temperature, we investigated the adsorption of oxygen on the ...
A reflectance-difference spectroscopy (RD) system was designed and built. Automatically controlled b...
We present a high-resolution ultraviolet photoelectron spectroscopy study of the room temperature Cs...
The growth of thin indium-layers on the GaAs(100) As-rich (2 x 4)/c(2 x 8) surface has been investig...
Reflectance anisotropy spectra of Cu and Ag (110) surfaces are obtained by ab initio calculations. W...
We present reflectance anisotropy spectra in the energy range 1.0-5.5 eV, measured for cleaved III-V...
Upon adsorption of Cs, the As-rich c(2 X 8)/(2 X 4) reconstruction of GaAs(001) is found to exhibit ...
Upon adsorption of Cs, the As-rich c(2×8)/(2×4) reconstruction of GaAs(001) is found to exhibit an i...
We present calculated and measured reflectance anisotropy spectra (RAS) in the energy range from 1 t...
The optical properties of the GaAs(110) surface are studied by means of self-consistent local-densit...
The creation of nanometre-scale patterns by self organization is of great interest, because of its p...
The creation of nanometre-scale patterns by self organization is of great interest, because of its p...
With mid-infrared spectroscopy at room temperature, we investigated the adsorption of oxygen on the ...
A reflectance-difference spectroscopy (RD) system was designed and built. Automatically controlled b...
We present a high-resolution ultraviolet photoelectron spectroscopy study of the room temperature Cs...
The growth of thin indium-layers on the GaAs(100) As-rich (2 x 4)/c(2 x 8) surface has been investig...
Reflectance anisotropy spectra of Cu and Ag (110) surfaces are obtained by ab initio calculations. W...