Highly-mismatched InAs/InSe heterojunction diodes
- Velichko, A.V.
- Kudrynskyi, Z.R.
- Di Paola, D.M.
- Makarovsky, O.
- Kesaria, M.
- Krier, A.
- Sandall, I.C.
- Tan, C.H.
- Kovalyuk, Z.D.
- Patanè, A.
DOIAbstract
We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges
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