AlGaInN Laser Diode Technology for Systems Applications
- Najda, S. P.
- Perlin, P.
- Suski, T.
- Marona, L.
- Bockowski, M.
- Leszczyński, M.
- Wisniewski, P.
- Czernecki, R.
- Kucharski, R.
- Targowski, G.
- Watson, S.
- Kelly, A.E.
Publication date
January 2016
DOI Publisher
SPIE-Intl Soc Optical Eng Language
EnglishAbstract
Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation
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