This paper describes the performance of a fabricated prototype Al0.2Ga0.8As 55Fe radioisotope microbattery photovoltaic cells over the temperature range −20 °C to 50 °C. Two 400 μm diameter p+-i-n+ (3 μm i-layer) Al0.2Ga0.8As mesa photodiodes were used as conversion devices in a novel X-ray microbattery prototype. The changes of the key microbattery parameters were analysed in response to temperature: the open circuit voltage, the maximum output power and the internal conversion efficiency decreased when the temperature was increased. At −20 °C, an open circuit voltage and a maximum output power of 0.2 V and 0.04 pW, respectively, were measured per photodiode. The best internal conversion efficiency achieved for the fabricated prototype was...
Three custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200 µm diameter, 3 µm i layer) were ele...
© 2016 Author(s). Results characterising the performance of thin (2 μm i-layer) Al0.52In0.48P p+-i-n...
AbstractThree custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200µm diameter, 3µm i layer) we...
An Al0.52In0.48P 55Fe radioisotope microbattery is demonstrated over the temperature range -20 °C to...
An Al0.52In0.48P 55Fe radioisotope microbattery is demonstrated over the temperature range −20 °C to...
The effects of temperature on the key parameters of a prototype GaAs 55Fe radioisotope X-ray microba...
This paper investigates the effects of temperature on an InGaP (GaInP) (55)Fe X-ray photovoltaic cel...
This paper investigates the effects of temperature on an InGaP (GaInP) 55Fe X-ray photovoltaic cell ...
In this paper, the performance of an Al0.52In0.48P 63 Ni radioisotope cell is reported over the temp...
Two 400 μm diameter Al0.52In0.48P p+-i-n+ mesa photodiodes (6 μm i layer) were fabricated from a waf...
Five mesa p+-i-n+ photodiodes (each of 0.126 mm2 area) were investigated as conversion devices for X...
A prototype InGaP p+–i–n+ mesa photodiode was studied for its potential as the energy conversion de...
A prototype InGaP p+–i–n+ mesa photodiode was studied for its potential as the energy conversion dev...
A GaAs 63Ni radioisotope betavoltaic cell is reported over the temperature range 70 °C to −20 °C. Th...
Results characterising a set of nine prototype Al0.8Ga0.2As p+–i–n+ mesa photodiodes (400 µm diamete...
Three custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200 µm diameter, 3 µm i layer) were ele...
© 2016 Author(s). Results characterising the performance of thin (2 μm i-layer) Al0.52In0.48P p+-i-n...
AbstractThree custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200µm diameter, 3µm i layer) we...
An Al0.52In0.48P 55Fe radioisotope microbattery is demonstrated over the temperature range -20 °C to...
An Al0.52In0.48P 55Fe radioisotope microbattery is demonstrated over the temperature range −20 °C to...
The effects of temperature on the key parameters of a prototype GaAs 55Fe radioisotope X-ray microba...
This paper investigates the effects of temperature on an InGaP (GaInP) (55)Fe X-ray photovoltaic cel...
This paper investigates the effects of temperature on an InGaP (GaInP) 55Fe X-ray photovoltaic cell ...
In this paper, the performance of an Al0.52In0.48P 63 Ni radioisotope cell is reported over the temp...
Two 400 μm diameter Al0.52In0.48P p+-i-n+ mesa photodiodes (6 μm i layer) were fabricated from a waf...
Five mesa p+-i-n+ photodiodes (each of 0.126 mm2 area) were investigated as conversion devices for X...
A prototype InGaP p+–i–n+ mesa photodiode was studied for its potential as the energy conversion de...
A prototype InGaP p+–i–n+ mesa photodiode was studied for its potential as the energy conversion dev...
A GaAs 63Ni radioisotope betavoltaic cell is reported over the temperature range 70 °C to −20 °C. Th...
Results characterising a set of nine prototype Al0.8Ga0.2As p+–i–n+ mesa photodiodes (400 µm diamete...
Three custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200 µm diameter, 3 µm i layer) were ele...
© 2016 Author(s). Results characterising the performance of thin (2 μm i-layer) Al0.52In0.48P p+-i-n...
AbstractThree custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200µm diameter, 3µm i layer) we...