Add to ORKGAn optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (beta-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mum. Photodetector devices are also described</p
La lumière généré à l'intérieur d'un composant de silicium donne à la même fois des informations sur...
The invention relates to an optoelectronic component with a silicon or III-V semiconductor layer and...
A Si-based p-i-n light emitting diode for 1.6 mum operation at room temperature has been realized, w...
A silicon light emitting device is designed and simulated. It is fabricated in 0.6μm standard CMOS t...
AbstractA full analysis of an optoelectronic circuit on silicon composed by a light emitter, an opti...
Si-based optoelectronic devices, including stimulated emission from Si diode, 1.3 and 1.5mum SiGe ph...
β-FeSi2/Si light emitting devices (LEDs) have been attracting great interest since the first success...
The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor het...
This work presents a novel integrable silicon photodetector which can only be conceived as part of a...
A silicon light emitting device is designed and simulated. It is fabricated in 0.6 mum standard CMOS...
Electroluminescent devices in porous silicon technology are presented. The fabrication and the chara...
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted ...
We describe a silicon-based lateral p-i-n junction device for light sensing applications. This devic...
'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentr...
This paper is divided into four subsections: 1) LED Source Components, 2) Source Modulation Electron...
La lumière généré à l'intérieur d'un composant de silicium donne à la même fois des informations sur...
The invention relates to an optoelectronic component with a silicon or III-V semiconductor layer and...
A Si-based p-i-n light emitting diode for 1.6 mum operation at room temperature has been realized, w...
A silicon light emitting device is designed and simulated. It is fabricated in 0.6μm standard CMOS t...
AbstractA full analysis of an optoelectronic circuit on silicon composed by a light emitter, an opti...
Si-based optoelectronic devices, including stimulated emission from Si diode, 1.3 and 1.5mum SiGe ph...
β-FeSi2/Si light emitting devices (LEDs) have been attracting great interest since the first success...
The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor het...
This work presents a novel integrable silicon photodetector which can only be conceived as part of a...
A silicon light emitting device is designed and simulated. It is fabricated in 0.6 mum standard CMOS...
Electroluminescent devices in porous silicon technology are presented. The fabrication and the chara...
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted ...
We describe a silicon-based lateral p-i-n junction device for light sensing applications. This devic...
'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentr...
This paper is divided into four subsections: 1) LED Source Components, 2) Source Modulation Electron...
La lumière généré à l'intérieur d'un composant de silicium donne à la même fois des informations sur...
The invention relates to an optoelectronic component with a silicon or III-V semiconductor layer and...
A Si-based p-i-n light emitting diode for 1.6 mum operation at room temperature has been realized, w...