M.Sc. (Physics)Silicon thin films can be manufactured with the aid of various deposition techniques, each with its own unique properties. In this study the optical properties of silicon manufactured with physical vapour deposition from an electron beam source were studied as a function of layer thickness, deposition rate and substrate temperature. The index of refraction (n and k) as well as optical gap eg. were determined with the aid of characterization models derived specific for optical techniques. These models are covered extensively in the thesis. It was found that the layers were homogeneous and stable, but that the deposition rate and substrate temperature did have a large influence on the properties of the layers. The results show ...
Thin silicon films of varying thickness were deposited on foreign substrates by electron-cyclotron r...
Thesis (Master)--Izmir Institute of Technology, Physics, Izmir, 2005Includes bibliographical referen...
In this paper we report on homoepitaxial growth of Si thin films at substrate temperatures Ts 500 65...
The ellipsometric study of polycrystalline silicon films deposited using a single wafer rapid therma...
This thesis deals with surface analysis and characterization of optical features of thin films creat...
Investigations on thin films of silicon. - One can determine the complex index and the thickness of ...
The technological importance of thin films of such materials as amorphous silicon and amorphous carb...
Optical studies were performed on annealed hydrogenated silicon (Si:H) thin films deposited by plasm...
Ultra-thin silicon films, with thicknesses approximately 10 nm, were low pressure chemically vapor d...
Conventional forms of silicon thin-film, prepared through the use of a plasma, offer a variety of at...
The presented thesis will discuss the recent development in the deposition of silicon by atmospheric...
The effect of substrate temperature on the crystallinity and stress of ion beam sputtered silicon on...
International audienceThe paper deals with the properties of silicon films obtained by low-pressure ...
Hot-wire chemical vapor deposition is employed for the deposition of amorphous and microcrystalline ...
Polycrystalline silicon films were chemically vapor deposited on oxidised silicon and quartz substra...
Thin silicon films of varying thickness were deposited on foreign substrates by electron-cyclotron r...
Thesis (Master)--Izmir Institute of Technology, Physics, Izmir, 2005Includes bibliographical referen...
In this paper we report on homoepitaxial growth of Si thin films at substrate temperatures Ts 500 65...
The ellipsometric study of polycrystalline silicon films deposited using a single wafer rapid therma...
This thesis deals with surface analysis and characterization of optical features of thin films creat...
Investigations on thin films of silicon. - One can determine the complex index and the thickness of ...
The technological importance of thin films of such materials as amorphous silicon and amorphous carb...
Optical studies were performed on annealed hydrogenated silicon (Si:H) thin films deposited by plasm...
Ultra-thin silicon films, with thicknesses approximately 10 nm, were low pressure chemically vapor d...
Conventional forms of silicon thin-film, prepared through the use of a plasma, offer a variety of at...
The presented thesis will discuss the recent development in the deposition of silicon by atmospheric...
The effect of substrate temperature on the crystallinity and stress of ion beam sputtered silicon on...
International audienceThe paper deals with the properties of silicon films obtained by low-pressure ...
Hot-wire chemical vapor deposition is employed for the deposition of amorphous and microcrystalline ...
Polycrystalline silicon films were chemically vapor deposited on oxidised silicon and quartz substra...
Thin silicon films of varying thickness were deposited on foreign substrates by electron-cyclotron r...
Thesis (Master)--Izmir Institute of Technology, Physics, Izmir, 2005Includes bibliographical referen...
In this paper we report on homoepitaxial growth of Si thin films at substrate temperatures Ts 500 65...