Structurally Modified Manganites for Different Applications

An investigation of hole doped perovskite manganites R1-xAxMnO3, (where\ud R = La, Nd, Pr and Eu etc., and A = Sr, Ca and Ba etc.) have received significant\ud attention in applied physics because they possess many interesting properties that\ud have wide potential applications for different kinds of devices/systems such as\ud magnetic memory, uncooled infrared (IR) microbolometer and magnetic\ud refrigeration technologies. The discovery of colossal magnetoresistance (CMR) in\ud manganites raised the attention of scientific community. CMR effect attributed to\ud remarkable reduction of electrical resistance under the application of external\ud magnetic field, which makes them useful for the devices such as magnetic memory\ud and spin-electronic devices. However the CMR effect realized in manganites at high\ud magnetic fields, restricts these materials for device applications owing to the\ud requirement of high magnetic field. Thus finding a material exhibiting CMR effect\ud at low magnetic fields is challenging. Moreover, manganites exhibit high\ud temperature coefficient of resistance (TCR) around metal-insulator transition, which\ud makes them suitable for uncooled infrared microbolometer. In addition to that\ud manganites are applicable in magnetic refrigeration due to large change in magnetic\ud entropy around ferromagnetic to paramagnetic transition