Process variations in integrated circuits have significant impact on their performance, leakage and stability. This is particularly evident in large, regular and dense structures such as DRAMs. DRAMs are built using minimized transistors with presumably uniform speed in an organized array structure. Process variation can introduce latency disparity among different memory arrays. With the proliferation of 3D stacking technology, DRAMs become a favorable choice for stacking on top of a multi-core processor as a last level cache for large capacity, high bandwidth, and low power. Hence, variations in bank speed create a unique problem of non-uniform cache accesses in the 3D space.In this thesis, we investigate cache management techniques for to...
Resource pooling, wheremultiple architectural components are shared among cores, is a promising tech...
Process parameter variations are expected to be significantly high in a sub-50-nm technology regime,...
Advancements in packaging technology enable high-bandwidth 3D-DRAM that mitigates the memory bandwid...
Process variations in integrated circuits have significant impact on their performance, leakage and ...
Recently, 3D-stacked dynamic random access memory (DRAM) has become a promising solution for ultra-h...
With continued technology scaling, process variations will be especially detrimental to six-transist...
Abstract. The memory wall (the gap between processing and storage speeds) remains a concern to compu...
Abstract — This paper introduces our research status focusing on 3D-implemented microprocessors. 3D-...
Multiple-channel die-stacked DRAMs have been used for maximizing the performance and minimizing the ...
Abstract—The memory bandwidth can dramatically be improved by means of stacking the main memory (DRA...
As technology scales, more sophisticated fabrication processes cause variations in many different pa...
Large dense structures like DRAMs are particularly susceptible to process variation, which can lead ...
As technology scales, more sophisticated fabrication processes cause variations in many different pa...
textContemporary DRAM systems have maintained impressive scaling by managing a careful balance betwe...
on a multi-core processor has many benefits for the embedded system. Compared with a conventional 2D...
Resource pooling, wheremultiple architectural components are shared among cores, is a promising tech...
Process parameter variations are expected to be significantly high in a sub-50-nm technology regime,...
Advancements in packaging technology enable high-bandwidth 3D-DRAM that mitigates the memory bandwid...
Process variations in integrated circuits have significant impact on their performance, leakage and ...
Recently, 3D-stacked dynamic random access memory (DRAM) has become a promising solution for ultra-h...
With continued technology scaling, process variations will be especially detrimental to six-transist...
Abstract. The memory wall (the gap between processing and storage speeds) remains a concern to compu...
Abstract — This paper introduces our research status focusing on 3D-implemented microprocessors. 3D-...
Multiple-channel die-stacked DRAMs have been used for maximizing the performance and minimizing the ...
Abstract—The memory bandwidth can dramatically be improved by means of stacking the main memory (DRA...
As technology scales, more sophisticated fabrication processes cause variations in many different pa...
Large dense structures like DRAMs are particularly susceptible to process variation, which can lead ...
As technology scales, more sophisticated fabrication processes cause variations in many different pa...
textContemporary DRAM systems have maintained impressive scaling by managing a careful balance betwe...
on a multi-core processor has many benefits for the embedded system. Compared with a conventional 2D...
Resource pooling, wheremultiple architectural components are shared among cores, is a promising tech...
Process parameter variations are expected to be significantly high in a sub-50-nm technology regime,...
Advancements in packaging technology enable high-bandwidth 3D-DRAM that mitigates the memory bandwid...