セレンカ カドミウム ウスマク トランジスタ ノ セイサク ジョウケン III

In the previous papers, we showed that the CdSe evaporation temperature range of 700-850oC was profitable to obtain high Gm TFT independent of the substrate temperature. Here, the deposition temperature dependence of Hall mobility of CdSe thin films is investigated, and it is shown that dependence of Gm of TFT on the deposition conditions is attributed to the Hall mobility dependence of CdSe films on the deposition conditions. The variations of the conductivity, Hall mobility and carrier concentration of CdSe films as a function of temperature are also investigated. These results show that the conduction electrons of most CdSe films are degenerated at the room temperature, and that Hall mobility increases with temperature approximately following T^ which is characteristic of the ion scattering. The results of field effect mobility study of CdSe film are found to be in good agreement with those of CdS film measured by A.Waxman