Add to ORKGOne aspect of the invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, it includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an N2 environment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film
A seed layer structure is annealed. It comprises a crystallization catalyst material on a seed semic...
Polycrystalline silicon (poly-Si) film was fabricated by indirect process of re-crystallization of a...
Low-temperature (400–540 °C) crystallization of amorphous and polycrystalline Si films deposited on ...
One aspect of the invention relates to a method for fabricating a polycrystalline silicon film. In o...
An oxide or nitride layer on an amorphous semiconductor layer prior to performing metal-induced crys...
The fabrication of large-grain 1.25 μm thick polycrystalline silicon (poly-Si) films via two-stage a...
Thin large grained polycrystalline Si poly Si films can be formed on foreign substrates e.g. glas...
AbstractThe realization of crystalline silicon thin films on foreign substrates is an attractive alt...
Development of high quality polycrystalline silicon film is in strong demand for active matrix organ...
The investigation of polycrystalline silicon made on glass and carbon coated nickel substrates by al...
In this chapter, we present an overview of the state of the art in different deposition and processi...
Crystallisation of seed layers on inexpensive foreign substrates and their subsequent epitaxial thi...
AbstractA silicon thin-film technology could lead to less expensive modules by the use of less silic...
We have demonstrated that a polycrystalline silicon thin film can be fabricated in situ on soda-lime...
A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced c...
A seed layer structure is annealed. It comprises a crystallization catalyst material on a seed semic...
Polycrystalline silicon (poly-Si) film was fabricated by indirect process of re-crystallization of a...
Low-temperature (400–540 °C) crystallization of amorphous and polycrystalline Si films deposited on ...
One aspect of the invention relates to a method for fabricating a polycrystalline silicon film. In o...
An oxide or nitride layer on an amorphous semiconductor layer prior to performing metal-induced crys...
The fabrication of large-grain 1.25 μm thick polycrystalline silicon (poly-Si) films via two-stage a...
Thin large grained polycrystalline Si poly Si films can be formed on foreign substrates e.g. glas...
AbstractThe realization of crystalline silicon thin films on foreign substrates is an attractive alt...
Development of high quality polycrystalline silicon film is in strong demand for active matrix organ...
The investigation of polycrystalline silicon made on glass and carbon coated nickel substrates by al...
In this chapter, we present an overview of the state of the art in different deposition and processi...
Crystallisation of seed layers on inexpensive foreign substrates and their subsequent epitaxial thi...
AbstractA silicon thin-film technology could lead to less expensive modules by the use of less silic...
We have demonstrated that a polycrystalline silicon thin film can be fabricated in situ on soda-lime...
A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced c...
A seed layer structure is annealed. It comprises a crystallization catalyst material on a seed semic...
Polycrystalline silicon (poly-Si) film was fabricated by indirect process of re-crystallization of a...
Low-temperature (400–540 °C) crystallization of amorphous and polycrystalline Si films deposited on ...