Characteristics of transport in electron internal transport barriers and in the vicinity of rational surfaces in the Large Helical Device

Characteristics of transport in electron internal transport barriers (ITB) and in the vicinity of a rational surface with a magnetic island are studied with transient transport analysis as well as with steady state transport analysis. Associated with the transition of the radial electric field from a small negative value (ion-root) to a large positive value (electron-root), an electron ITB appears in the Large Helical Device [M. Fujiwara et al., Nucl. Fusion 41, 1355 (2001)], when the heating power of the electron cyclotron heating exceeds a power threshold. Transport analysis shows that both the standard electron thermal diffusivity, chie, and the incremental electron thermal diffusivity, chieinc (the derivative of normalized heat flux to temperature gradient, equivalent to heat pulse chie), are reduced significantly (a factor 5 10) in the ITB. The chieinc is much lower than the chie by a factor of 3 just after the transition, while chieinc is comparable to or even higher than chie before the transition, which results in the improvement of electron transport with increasing power in the ITB, in contrast to its degradation outside the ITB. In other experiments without an ITB, a significant reduction (by one order of magnitude) of chieinc is observed at the O-point of the magnetic island produced near the plasma edge using error field coils. This observation gives significant insight into the mechanism of transport improvement near the rational surface and implies that the magnetic island serves as a poloidally asymmetric transport barrier. Therefore the radial heat flux near the rational surface is focused at the X-point region, and that may be the mechanism to induce an ITB near a rational surface