Sb2Te3 thin films of different temperature ranging from room temperature to 200°C were prepared on glass substrate by thermal evaporation method. The effects of temperature on optical and morphological properties of thin films were studied. AFM images indicated crystalline nature of Sb2Te3. The optical properties exhibited a decreasing trend of band gap from 1.24eV to 1.06eV with increase in temperature. Transmittance decreased as the temperature was increased and displayed no transmittance in the visible range at 200°C. Surface roughness decreased up to 150°C after which it increased
Thin films of different thicknesses in the range of 200-720 nm have been deposited on glass substrat...
Sb2S3 films were deposited on unheated glass substrates by thermal evaporation and annealed under va...
Bi0.4Te3.0Sb1.6 thin films on glass substrates are fabricated by a flash evaporation method. In orde...
Sb2Te3 thin films of different thickness ranging from 100 to 500 nm were prepd. on glass substrate b...
The effect of thickness and heat treatment on the structural and optical properties of Sb2Te3 thin ...
Thin films of Sb2O3 with different thickness (d=0.20-1.10 µm) were deposited onto glass substrates b...
Thin films Bi2Te3 with the thickness range of 37-110 nm have been deposited on clean glass substrate...
Antimony telluride (Sb2Te3) thin films were obtained by metalorganic chemical vapor deposition (MOCV...
The deposition and characterization of n-type Bi2Te3 and p-type Sb2Te3 semiconductor films are repo...
Sb2S3 thin films were deposited by thermal evaporation method with oblique angle deposition techniqu...
Antimony telluride (Sb2Te3) is a chalcogenide material used in thermoelectric applications. The depo...
Abstract. The deposition and characterization of n-type Bi2Te3 and p-type Sb2Te3 semiconductor films...
AbstractSn doped Sb2S3 thin films have been deposited by single source vacuum thermal evaporation on...
Deposition of Sb2Te3 thin films on soda-lime glass substrates by coevaporation of Sb and Te is descr...
This presentation reports the deposition and characterization of n-type Bi2Te3 and p-type Sb2Te3 sem...
Thin films of different thicknesses in the range of 200-720 nm have been deposited on glass substrat...
Sb2S3 films were deposited on unheated glass substrates by thermal evaporation and annealed under va...
Bi0.4Te3.0Sb1.6 thin films on glass substrates are fabricated by a flash evaporation method. In orde...
Sb2Te3 thin films of different thickness ranging from 100 to 500 nm were prepd. on glass substrate b...
The effect of thickness and heat treatment on the structural and optical properties of Sb2Te3 thin ...
Thin films of Sb2O3 with different thickness (d=0.20-1.10 µm) were deposited onto glass substrates b...
Thin films Bi2Te3 with the thickness range of 37-110 nm have been deposited on clean glass substrate...
Antimony telluride (Sb2Te3) thin films were obtained by metalorganic chemical vapor deposition (MOCV...
The deposition and characterization of n-type Bi2Te3 and p-type Sb2Te3 semiconductor films are repo...
Sb2S3 thin films were deposited by thermal evaporation method with oblique angle deposition techniqu...
Antimony telluride (Sb2Te3) is a chalcogenide material used in thermoelectric applications. The depo...
Abstract. The deposition and characterization of n-type Bi2Te3 and p-type Sb2Te3 semiconductor films...
AbstractSn doped Sb2S3 thin films have been deposited by single source vacuum thermal evaporation on...
Deposition of Sb2Te3 thin films on soda-lime glass substrates by coevaporation of Sb and Te is descr...
This presentation reports the deposition and characterization of n-type Bi2Te3 and p-type Sb2Te3 sem...
Thin films of different thicknesses in the range of 200-720 nm have been deposited on glass substrat...
Sb2S3 films were deposited on unheated glass substrates by thermal evaporation and annealed under va...
Bi0.4Te3.0Sb1.6 thin films on glass substrates are fabricated by a flash evaporation method. In orde...