Sub-band gap absorption measurement on intrinsic hydrogenated amorphous silicon by the constant photocurrent method

Includes bibliographical references (pages 27-28)Sub-band gap absorption is a good measure of the defect density in hydrogenated amorphous silicon (a-Si:H). The aim of this work is to design, construct and automate an apparatus to measure the sub-band gap absorption in a-Si:H by the constant photocurrent method (CPM). Successful operation of this system is demonstrated by the results of measurements performed on several samples.M.S. (Master of Science