Add to ORKGThe MOSFET, or metal-oxide-semiconductor field-effect transistor, are the sole entities responsible for processing in microchips of everyday electronics, yet they have become extremely small. How can one manufacture such a small, powerful product? By using the simple process of pushing ions away with a nearby electric charge, a switch can be compressed down to unimaginable sizes
The purpose of this paper is to describe the design and the process used to fabricate NMOS devices. ...
Molybdenum disulfide (MoS2) is a semiconductor material that is a member of the family of the so-cal...
Work under DOE Grant No. DE-FG47-93R701314, to investigate a Novel Process for Fabricating MOSFET De...
The insulated-gate field-effect transistor was conceived in the 1930s by Lilienfeld and Heil. An ins...
The physical phenomena which will ultimately limit MOS circuit miniaturization are considered. It is...
The physical phenomena which will ultimately limit MOS circuit miniaturization are considered. It is...
The physical phenomena which will ultimately limit MOS circuit miniaturization are considered. It is...
Microfabrication and field-effect transistors are two key enabling technologies for today’s informat...
Created by Patrick Hoppe, of the Wisconsin Online Resource Center, this is an introduction to the me...
AbstractThis paper briefly discusses the development of Metal Oxide Semiconductor Field Effect Trans...
Created by Patrick Hoppe of the Wisconsin Online Resource Center this is an introduction to the meta...
Created by Patrick Hoppe of the Wisconsin Online Resource Center this is an introduction to the meta...
Invention of Transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field E...
The purpose of this paper is to describe the design and the process used to fabricate NMOS devices. ...
This chapter builds a deep understanding of the modern MOS (metal–oxide–semiconductor) structures. T...
The purpose of this paper is to describe the design and the process used to fabricate NMOS devices. ...
Molybdenum disulfide (MoS2) is a semiconductor material that is a member of the family of the so-cal...
Work under DOE Grant No. DE-FG47-93R701314, to investigate a Novel Process for Fabricating MOSFET De...
The insulated-gate field-effect transistor was conceived in the 1930s by Lilienfeld and Heil. An ins...
The physical phenomena which will ultimately limit MOS circuit miniaturization are considered. It is...
The physical phenomena which will ultimately limit MOS circuit miniaturization are considered. It is...
The physical phenomena which will ultimately limit MOS circuit miniaturization are considered. It is...
Microfabrication and field-effect transistors are two key enabling technologies for today’s informat...
Created by Patrick Hoppe, of the Wisconsin Online Resource Center, this is an introduction to the me...
AbstractThis paper briefly discusses the development of Metal Oxide Semiconductor Field Effect Trans...
Created by Patrick Hoppe of the Wisconsin Online Resource Center this is an introduction to the meta...
Created by Patrick Hoppe of the Wisconsin Online Resource Center this is an introduction to the meta...
Invention of Transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field E...
The purpose of this paper is to describe the design and the process used to fabricate NMOS devices. ...
This chapter builds a deep understanding of the modern MOS (metal–oxide–semiconductor) structures. T...
The purpose of this paper is to describe the design and the process used to fabricate NMOS devices. ...
Molybdenum disulfide (MoS2) is a semiconductor material that is a member of the family of the so-cal...
Work under DOE Grant No. DE-FG47-93R701314, to investigate a Novel Process for Fabricating MOSFET De...