Cavity dumping is an effective technique for generating Q-switched laser pulses of relatively large energy and extremely short time duration, and the width of Q-switched pulses is primarily a function of the oscillator cavity length. The solid state lateral semi-insulating GaAs photoconductive semiconductor switch (PCSS) has the unique ability to handle high power at very fast response time with very little timing jitter. A novel and effective technique of cavity dumping laser for generating short Q-switched laser pulses with a GaAs PCSS is presented. In a flashlamp pumped Nd:YAG laser with 20 cm long stable resonator, 1.7 ns short laser pulses have been obtained, and the pulse to pulse duration instability is less than 7% and energy instab...
The chapter reviews the physical foundations, the theoretical analysis, the experimental implementat...
This thesis describes ultrashort pulse production techniques for semiconductor diode lasers. Three m...
We report on the generation of 825 V electrical pulses with 1.4 ps rise time and 4.0 ps duration usi...
High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electro...
This report provides a summary of the Pulser In a Chip 9000-Discretionary LDRD. The program began in...
Experiments of an all-solid-state insulated lateral semi-insulating GaAs photoconductive semiconduct...
High gain GaAs photoconductive semiconductor switches (PCSS) are being used in a variety of electric...
Optically activated GaAs switches operated in their high main mode are being used or tested for puls...
In this paper, the positive and negative symmetric pulses with a fast rising edge were generated by ...
We report on the experimental results of a lateral semi-insulating GaAs photoconductive switch, with...
Abstract – Photoconductive semiconductor switch (PCSS) experiments excited by YAG:Nd laser at 1064 n...
Pulses tens of picoseconds in duration have been produced from semiconductor lasers both by injectio...
In this study, a 3 mm gap GaAs photoconductive semiconductor switch (GaAs PCSS) was triggered by pul...
Cavity-dumped lasers have significant advantages over more conventional Q-switched lasers for high-r...
A novel ultra-wideband electromagnetic pulse generating method based on the photoconductive semicond...
The chapter reviews the physical foundations, the theoretical analysis, the experimental implementat...
This thesis describes ultrashort pulse production techniques for semiconductor diode lasers. Three m...
We report on the generation of 825 V electrical pulses with 1.4 ps rise time and 4.0 ps duration usi...
High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electro...
This report provides a summary of the Pulser In a Chip 9000-Discretionary LDRD. The program began in...
Experiments of an all-solid-state insulated lateral semi-insulating GaAs photoconductive semiconduct...
High gain GaAs photoconductive semiconductor switches (PCSS) are being used in a variety of electric...
Optically activated GaAs switches operated in their high main mode are being used or tested for puls...
In this paper, the positive and negative symmetric pulses with a fast rising edge were generated by ...
We report on the experimental results of a lateral semi-insulating GaAs photoconductive switch, with...
Abstract – Photoconductive semiconductor switch (PCSS) experiments excited by YAG:Nd laser at 1064 n...
Pulses tens of picoseconds in duration have been produced from semiconductor lasers both by injectio...
In this study, a 3 mm gap GaAs photoconductive semiconductor switch (GaAs PCSS) was triggered by pul...
Cavity-dumped lasers have significant advantages over more conventional Q-switched lasers for high-r...
A novel ultra-wideband electromagnetic pulse generating method based on the photoconductive semicond...
The chapter reviews the physical foundations, the theoretical analysis, the experimental implementat...
This thesis describes ultrashort pulse production techniques for semiconductor diode lasers. Three m...
We report on the generation of 825 V electrical pulses with 1.4 ps rise time and 4.0 ps duration usi...