Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

A GaN vertical light emitting diode(LED) with a current block layer(CBL) was investigated. Vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated. Optical and electrical tests were carried out. The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are40.6% and60.7% higher than that of vertical LEDs without a CBL at350 mA, respectively. The efficiencies of vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL drop to72%,78% and85.5% of their maximum efficiency at350 mA, respectively. Moreover, vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability.?2011 Chinese Institute of Electronics