High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD

High quality, homoepitaxial layers of4H-SiC were grown on off-oriented4H-SiC(0001) Si planes in a vertical low-pressure hot-wall CVD system(LPCVD) by using trichlorosilane(TCS) as a silicon precursor source together with ethylene(C2H4) as a carbon precursor source. The growth rate of25-30μm/h has been achieved at lower temperatures between1500 and1530°C. The surface roughness and crystalline quality of50μm thick epitaxial layers(grown for2 h) did not deteriorate compared with the corresponding results of thinner layers(grown for30 min). The background doping concentration was reduced to2.13×1015× cm-3. The effect of the C/Si ratio in the gas phase on growth rate and quality of the epi-layers was investigated.?2011 Chinese Institute of Electronics