Add to ORKGWe report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a180°C GeSn MBE growth, sub-370°C Si2H6 surface passivation and gate stack process for GeSn, and an implantless metallic NiGeSn S/D formed at350°C. A hole mobility of430 cm2/Vs is obtained for GeSn pMOSFETs, which is66% higher than that of the Ge control pMOSFETs. GeSn pMOSFETs show a64% lower S/D resistance as compared to the Ge control devices.?2011 IEEE
To realize high-mobility surface channel pMOSFETs on Ge, a 1.6-nm-thick SiOX passivation layer betwe...
Compressively strained Ge long channel ring-type pMOSFETs with high-κ Si/SiO2/HfO2/TiN gate stacks a...
10.1109/ISTDM.2012.62224492012 International Silicon-Germanium Technology and Device Meeting, ISTDM ...
10.1109/IEDM.2011.6131569Technical Digest - International Electron Devices Meeting, IEDM16.7.1-16.7....
Ultrathin GeSn layers with a thickness of 5.5 nm are fabricated on a Si(111) substrate by solid phas...
In this paper we present a systematic study of GeSn n-FETs. First, process modules such as high-k me...
The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconduct...
Compressively strained germanium tin (GeSn) channel P-MOSFETs have recently been demonstrated to ach...
The GeSn/Ge pMOSFETs with a novel GeSnON interlayer formed by the Sn-assisted oxynitridation method ...
GeSn is a promising material to make the most of two worlds [1]: (i) its direct bandgap for high Sn ...
Within the last few years single crystalline GeSn semiconductor alloys aroused significant scientifi...
10.1109/VLSIT.2012.6242479Digest of Technical Papers - Symposium on VLSI Technology97-98DTPT
Within the last few years single crystalline GeSn semiconductor alloys aroused significant scientifi...
10.1109/VLSI-TSA.2013.65456152013 International Symposium on VLSI Technology, Systems and Applicatio...
1. Introduction GeSn has been predicted to exhibit carrier mobilities exceeding both that of Ge and ...
To realize high-mobility surface channel pMOSFETs on Ge, a 1.6-nm-thick SiOX passivation layer betwe...
Compressively strained Ge long channel ring-type pMOSFETs with high-κ Si/SiO2/HfO2/TiN gate stacks a...
10.1109/ISTDM.2012.62224492012 International Silicon-Germanium Technology and Device Meeting, ISTDM ...
10.1109/IEDM.2011.6131569Technical Digest - International Electron Devices Meeting, IEDM16.7.1-16.7....
Ultrathin GeSn layers with a thickness of 5.5 nm are fabricated on a Si(111) substrate by solid phas...
In this paper we present a systematic study of GeSn n-FETs. First, process modules such as high-k me...
The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconduct...
Compressively strained germanium tin (GeSn) channel P-MOSFETs have recently been demonstrated to ach...
The GeSn/Ge pMOSFETs with a novel GeSnON interlayer formed by the Sn-assisted oxynitridation method ...
GeSn is a promising material to make the most of two worlds [1]: (i) its direct bandgap for high Sn ...
Within the last few years single crystalline GeSn semiconductor alloys aroused significant scientifi...
10.1109/VLSIT.2012.6242479Digest of Technical Papers - Symposium on VLSI Technology97-98DTPT
Within the last few years single crystalline GeSn semiconductor alloys aroused significant scientifi...
10.1109/VLSI-TSA.2013.65456152013 International Symposium on VLSI Technology, Systems and Applicatio...
1. Introduction GeSn has been predicted to exhibit carrier mobilities exceeding both that of Ge and ...
To realize high-mobility surface channel pMOSFETs on Ge, a 1.6-nm-thick SiOX passivation layer betwe...
Compressively strained Ge long channel ring-type pMOSFETs with high-κ Si/SiO2/HfO2/TiN gate stacks a...
10.1109/ISTDM.2012.62224492012 International Silicon-Germanium Technology and Device Meeting, ISTDM ...