A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under 3-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.</span
Quantum well lasers are shown to exhibit flattened broadband gain spectra at a particular pumping co...
We report on the InAs quantum dot (QD) external cavity laser (ECL) using a digital mirror device (DM...
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrat...
A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more t...
Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The d...
A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs q...
Self-assembled quantum dots (QDs) with broadband emitting spectra, QD superluminescent diodes (SLDs)...
A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning ...
A quantum-dot tapered waveguide external cavity laser is presented, with 100nm tunability. At 1230nm...
A quantum-dot tapered waveguide external cavity laser with 30nm tunability is reported, with a maxim...
A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor op...
A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor op...
This paper reviews the growth, characterization and device applications of self-assembled InAs/InP(1...
Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated....
Quantum well lasers are shown to exhibit flattened broadband gain spectra at a particular pumping co...
We report on the InAs quantum dot (QD) external cavity laser (ECL) using a digital mirror device (DM...
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrat...
A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more t...
Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The d...
A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs q...
Self-assembled quantum dots (QDs) with broadband emitting spectra, QD superluminescent diodes (SLDs)...
A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning ...
A quantum-dot tapered waveguide external cavity laser is presented, with 100nm tunability. At 1230nm...
A quantum-dot tapered waveguide external cavity laser with 30nm tunability is reported, with a maxim...
A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor op...
A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor op...
This paper reviews the growth, characterization and device applications of self-assembled InAs/InP(1...
Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated....
Quantum well lasers are shown to exhibit flattened broadband gain spectra at a particular pumping co...
We report on the InAs quantum dot (QD) external cavity laser (ECL) using a digital mirror device (DM...
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrat...