Add to ORKGExperiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO_2 encapsulation is reported. A maximum band gap wavelength blue-shift as large as 200nm is realized. Furthermore, an FP laser blue-shifted 21nm by QWI is fabricated with characteristics comparable with the asgrown one
Impurity free vacancy disordering (IFVD) has been used to investigate the atomic interdiffusion of I...
We have shown that high energy ion implantation enhanced intermixing (HE-IIEI) technology for quantu...
We report the selective area bandgap tuning of multiple quantum well structures by an impurity free ...
6 p.InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have b...
The intermixing of a InGaAs/InGaAsP multi-quantum-well (MQW) structure induced by SiO2 dielectric ca...
The intermixing characteristics of three widely used combinations of InP based quantum wells (QW) (I...
A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatial...
In this project, a novel QWI technique, based on the impurity free vacancies induced disordering (IF...
Impurity-free vacancy disordering (IFVD) using SiO/sub 2/ and SrF/sub 2/ dielectric caps to induce s...
Bandgap tuning of the InGaAsP/InP multiple quant um well (MQW) laser structure by the impurity-free ...
In this paper, we have investigated the bandgap tuning in the InGaAs (P) / InP multiquantum well (MQ...
The intermixing characteristics of three widely used combinations of InP-based quantum wells (QW) ar...
The intermixing characteristics of three widely used combinations of InP-based quantum wells (QW) ar...
Intermixing the wells and barriers of quantum well structures generally results in an increase in th...
The intermixing characteristics of three widely used combinations of InP based quantum wells (QW) ar...
Impurity free vacancy disordering (IFVD) has been used to investigate the atomic interdiffusion of I...
We have shown that high energy ion implantation enhanced intermixing (HE-IIEI) technology for quantu...
We report the selective area bandgap tuning of multiple quantum well structures by an impurity free ...
6 p.InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have b...
The intermixing of a InGaAs/InGaAsP multi-quantum-well (MQW) structure induced by SiO2 dielectric ca...
The intermixing characteristics of three widely used combinations of InP based quantum wells (QW) (I...
A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatial...
In this project, a novel QWI technique, based on the impurity free vacancies induced disordering (IF...
Impurity-free vacancy disordering (IFVD) using SiO/sub 2/ and SrF/sub 2/ dielectric caps to induce s...
Bandgap tuning of the InGaAsP/InP multiple quant um well (MQW) laser structure by the impurity-free ...
In this paper, we have investigated the bandgap tuning in the InGaAs (P) / InP multiquantum well (MQ...
The intermixing characteristics of three widely used combinations of InP-based quantum wells (QW) ar...
The intermixing characteristics of three widely used combinations of InP-based quantum wells (QW) ar...
Intermixing the wells and barriers of quantum well structures generally results in an increase in th...
The intermixing characteristics of three widely used combinations of InP based quantum wells (QW) ar...
Impurity free vacancy disordering (IFVD) has been used to investigate the atomic interdiffusion of I...
We have shown that high energy ion implantation enhanced intermixing (HE-IIEI) technology for quantu...
We report the selective area bandgap tuning of multiple quantum well structures by an impurity free ...