Add to ORKGIn this paper we report on the first results of epitaxial growth of GaN layers on GaAs (100) substrates using a modified MBE system, equipped with a DC-plasma source for nitrogen activation in configuration of reverse magnetron at ultra-low pressures
Gallium nitride (GaN) is a III-V semiconductor, characterized by direct, wide band gap of 3.4 eV at ...
A reduced rate for growth of GaN by plasma-assisted molecular beam epitaxy often limits growth to te...
High resolution electron microscopy was used to study the structure of {beta}-GaN epilayers grown on...
The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O...
Plasma-assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) has evolved over the ...
GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma sourc...
We report on ammonia and plasma-assisted molecular beam epitaxy (NH3-MBE and PAMBE) grown GaN layers...
The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE ...
We have studied the growth of zinc-blende GaN and AlxGa1-xN layers, structures and bulk crystals by ...
Epitaxial GaAs1-xNx thin films were grown on GaAs (001) substrates through solid-source molecular be...
The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE ...
The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is ...
The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures h...
To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice...
Developing growth techniques for the manufacture of wide band gap III-nitrides semiconductors is imp...
Gallium nitride (GaN) is a III-V semiconductor, characterized by direct, wide band gap of 3.4 eV at ...
A reduced rate for growth of GaN by plasma-assisted molecular beam epitaxy often limits growth to te...
High resolution electron microscopy was used to study the structure of {beta}-GaN epilayers grown on...
The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O...
Plasma-assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) has evolved over the ...
GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma sourc...
We report on ammonia and plasma-assisted molecular beam epitaxy (NH3-MBE and PAMBE) grown GaN layers...
The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE ...
We have studied the growth of zinc-blende GaN and AlxGa1-xN layers, structures and bulk crystals by ...
Epitaxial GaAs1-xNx thin films were grown on GaAs (001) substrates through solid-source molecular be...
The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE ...
The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is ...
The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures h...
To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice...
Developing growth techniques for the manufacture of wide band gap III-nitrides semiconductors is imp...
Gallium nitride (GaN) is a III-V semiconductor, characterized by direct, wide band gap of 3.4 eV at ...
A reduced rate for growth of GaN by plasma-assisted molecular beam epitaxy often limits growth to te...
High resolution electron microscopy was used to study the structure of {beta}-GaN epilayers grown on...