Add to ORKGHydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. For the first plateau-like region in the I-V curve, two kinds of sequential resonant tunnelling are observed. For P2 kbar the high-field domain is formed by the T-X process. For the second plateau-libe region, the high-field domain is attributed to Gamma-X sequential resonant tunnelling. (C) 1998 Elsevier Science B.V. All rights reserved
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field ...
We have studied the vertical transport and formation mechanisms of electric field domains in doped w...
We have studied the sequential resonant tunneling of doped weakly coupled GaAs/AlAs superlattices un...
The behavior of room temperature self-sustained current oscillations resulting from sequential reson...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
A dynamic dc voltage band was found emerging from each sawtooth-like branch of the current-voltage c...
A dynamic dc voltage band was found emerging from each sawtooth-like branch of the current-voltage c...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
SIGLEAvailable from British Library Document Supply Centre-DSC:D194178 / BLDSC - British Library Doc...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field ...
We have studied the vertical transport and formation mechanisms of electric field domains in doped w...
We have studied the sequential resonant tunneling of doped weakly coupled GaAs/AlAs superlattices un...
The behavior of room temperature self-sustained current oscillations resulting from sequential reson...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
A dynamic dc voltage band was found emerging from each sawtooth-like branch of the current-voltage c...
A dynamic dc voltage band was found emerging from each sawtooth-like branch of the current-voltage c...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
SIGLEAvailable from British Library Document Supply Centre-DSC:D194178 / BLDSC - British Library Doc...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...