We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pressure up to 7 GPa. The spectra contain only a broad emission band under excitation of the 406.7 nm line. Its pressure coefficients are 47, 62 and 45 meV/GPa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. The Stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 eV for the three samples, respectively. The small pressure coefficient and large Stokes shift indicate that the emission band observed in our samples may correspond to the Te isoelectronic center...
Optical absorption experiments were performed using diamond-anvil cells to measure the hydrostatic p...
Pressure dependence of photoluminescence from ZnSe:Te-(CdSe)(1)(ZnSe)(3) short period superlattice q...
In this paper we report the results of an optical investigation of excitons in ZnSSe/ZnSe symmetric ...
We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pres...
ZnS1-xTex (0.02less than or equal toxless than or equal to0.3) alloys are studied by photoluminescen...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence of four epitaxial ZnS: Te samples with Te concentration from 0.5% to 3.1% was ...
ZnS:Te epilayers with Te concentration from 0.5% to 3.1% were studied by photoluminescence under hyd...
ZnS:Te epilayers with Te concentration from 0.5% to 3.1% were studied by photoluminescence under hyd...
The pressure behavior of photoluminescence emission of ZnS<sub>1-x</sub>Te<sub>x</sub>(0.02≤x≤0.3) m...
ZnTe1-xSx epitaxial layers grown on GaAs by molecular-beam epitaxy were studied by photoluminescence...
Photoluminescence of some low-dimensional semiconductor structures has been investigated under press...
Isoelectronic center (IEC) forming deep level states in the forbidden gap can strongly enhance light...
Optical absorption experiments were performed using diamond-anvil cells to measure the hydrostatic p...
Pressure dependence of photoluminescence from ZnSe:Te-(CdSe)(1)(ZnSe)(3) short period superlattice q...
In this paper we report the results of an optical investigation of excitons in ZnSSe/ZnSe symmetric ...
We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pres...
ZnS1-xTex (0.02less than or equal toxless than or equal to0.3) alloys are studied by photoluminescen...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence of four epitaxial ZnS: Te samples with Te concentration from 0.5% to 3.1% was ...
ZnS:Te epilayers with Te concentration from 0.5% to 3.1% were studied by photoluminescence under hyd...
ZnS:Te epilayers with Te concentration from 0.5% to 3.1% were studied by photoluminescence under hyd...
The pressure behavior of photoluminescence emission of ZnS<sub>1-x</sub>Te<sub>x</sub>(0.02≤x≤0.3) m...
ZnTe1-xSx epitaxial layers grown on GaAs by molecular-beam epitaxy were studied by photoluminescence...
Photoluminescence of some low-dimensional semiconductor structures has been investigated under press...
Isoelectronic center (IEC) forming deep level states in the forbidden gap can strongly enhance light...
Optical absorption experiments were performed using diamond-anvil cells to measure the hydrostatic p...
Pressure dependence of photoluminescence from ZnSe:Te-(CdSe)(1)(ZnSe)(3) short period superlattice q...
In this paper we report the results of an optical investigation of excitons in ZnSSe/ZnSe symmetric ...