Taking the inhomogenous broadening of the electron energy levels into account, a coherent model of the resonant tunneling (RT) of electrons in double quantum wells is presented. The validity of the model is confirmed with the experiments [M. Nido et al., Proc. SPIE 1268, 177 (1990)], and shows that the tunneling process can be explained by the simple coherent theory even in the presence of the carrier scattering. We have discussed the dependence of resonant tunneling on the barrier thickness L(B) by introducing the contrast ratio LAMBDA and the full width at half depth of the RT valley, and found that LAMBDA first increases with increasing barrier thickness, reaches a maximum, and then decreases with a further increase of L(B), in striking ...
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in whi...
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in whi...
Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quant...
A description is given of resonant tunnelling processes in double-barrier semiconductor heterostruct...
A double-well resonant tunneling structure has been investigated carefully using the nonequilibrium ...
We present a transparent and simple theory describing coherent transport of charge carriers through ...
We present a transparent and simple theory describing coherent transport of charge carriers through ...
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in whi...
Recently, a new mechanism leading to electrical multistability in coherent-electron tunneling device...
A transition layer model is proposed and used to calculate resonant tunneling in a double-barrier qu...
As a basic theoretical study of a quantum device, we have studied the quantum tunneling effect in th...
Study of resonant tunneling through multimetallic quantum well (QW) structure is not only important ...
The effect of un electric fie1d on the electron energy and resonant width in a quantum well have hee...
\u3cp\u3eWe present a transparent and simple theory describing coherent transport of charge carriers...
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in whi...
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in whi...
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in whi...
Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quant...
A description is given of resonant tunnelling processes in double-barrier semiconductor heterostruct...
A double-well resonant tunneling structure has been investigated carefully using the nonequilibrium ...
We present a transparent and simple theory describing coherent transport of charge carriers through ...
We present a transparent and simple theory describing coherent transport of charge carriers through ...
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in whi...
Recently, a new mechanism leading to electrical multistability in coherent-electron tunneling device...
A transition layer model is proposed and used to calculate resonant tunneling in a double-barrier qu...
As a basic theoretical study of a quantum device, we have studied the quantum tunneling effect in th...
Study of resonant tunneling through multimetallic quantum well (QW) structure is not only important ...
The effect of un electric fie1d on the electron energy and resonant width in a quantum well have hee...
\u3cp\u3eWe present a transparent and simple theory describing coherent transport of charge carriers...
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in whi...
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in whi...
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in whi...
Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quant...