Red-emitting at about 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy are demonstrated, A double-peak structure of photoluminescence (PL) spectra from quantum dots was observed, and a bimodal distribution of dot sizes was also confirmed by an atomic force micrograph (AFM) image for uncapped sample. From the temperature and excitation intensity dependence of PL spectra, it is found that the double-peak structure of PL spectra from quantum dots is strongly correlated to the two predominant quantum dot families. Taking into account the quantum-size effect on the peak energy, it is proposed that the high (low) energy peak results from a smaller (larger) dot family, and this r...
Optical properties of InGaAs/GaAs self-organized quantum dots (QDs) structures covered by InxGa1-x A...
The photoluminescence (PL) spectra of self-assembled In0.55Al0.45As/Al0.45Ga0.5As quantum dots (QD) ...
1.3 $\mu $m room temperature emitting multiple-stacked InAs/GaAs(001) quantum dots (QDs) are grown ...
Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown...
We have investigated the temperature dependence of the photoluminescence (PL) spectrum of self-organ...
Molecular beam epitaxy has been used for growing InGaAs self-assembled quantum dots (QDs) in InAlAs ...
We reported the optical properties of self-assembled In0.55Al0.45As quantum dots grown by molecular ...
Self-assembled InAs quantum dots were prepared on GaAS(100)) substrate in a solid source molecular b...
Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic ...
A novel structure containing self-assembled, unstrained GaAs quantum dots is obtained by combining ...
Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been demonstrate...
International audienceThis work reports on the optical properties of self-assembled InAs/GaAs quantu...
Self-organized InAs quantum dots (QDs) with different depositions grown on an InP (100) substrate we...
We investigated the photoluminescence (PL) of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dot...
Three-dimensional confinement of carriers eliminates the problem of thermal spreading of carriers ob...
Optical properties of InGaAs/GaAs self-organized quantum dots (QDs) structures covered by InxGa1-x A...
The photoluminescence (PL) spectra of self-assembled In0.55Al0.45As/Al0.45Ga0.5As quantum dots (QD) ...
1.3 $\mu $m room temperature emitting multiple-stacked InAs/GaAs(001) quantum dots (QDs) are grown ...
Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown...
We have investigated the temperature dependence of the photoluminescence (PL) spectrum of self-organ...
Molecular beam epitaxy has been used for growing InGaAs self-assembled quantum dots (QDs) in InAlAs ...
We reported the optical properties of self-assembled In0.55Al0.45As quantum dots grown by molecular ...
Self-assembled InAs quantum dots were prepared on GaAS(100)) substrate in a solid source molecular b...
Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic ...
A novel structure containing self-assembled, unstrained GaAs quantum dots is obtained by combining ...
Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been demonstrate...
International audienceThis work reports on the optical properties of self-assembled InAs/GaAs quantu...
Self-organized InAs quantum dots (QDs) with different depositions grown on an InP (100) substrate we...
We investigated the photoluminescence (PL) of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dot...
Three-dimensional confinement of carriers eliminates the problem of thermal spreading of carriers ob...
Optical properties of InGaAs/GaAs self-organized quantum dots (QDs) structures covered by InxGa1-x A...
The photoluminescence (PL) spectra of self-assembled In0.55Al0.45As/Al0.45Ga0.5As quantum dots (QD) ...
1.3 $\mu $m room temperature emitting multiple-stacked InAs/GaAs(001) quantum dots (QDs) are grown ...