Add to ORKGThe surface reaction mechanism of Si1-xGex/Si growth using SiH4 and GeH4 in UHV/CVD system was studied. The saturated adsorption and desorption of SiH4 from Si(1 0 0) surface was investigated with the help of TPD and RHEED, and it was found that all the 4 hydrogen atoms of one SiH4 molecule were adsorbed to the Si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. The analysis of the reaction of GeH4 was also done. A new surface reaction kinetic model on Si1-xGex/Si epitaxial growth under UHV conditions by SiH4/GeH4 was proposed based on these studies. The predictions of the model were verified by the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved
The two-site exchange model for surface segregation is extended to take account of the site-blocking...
The effect chlorine addition to the gas mixture has on the surface chemistry in the chemical vapour ...
The growth rate R of Si(001), Ge(001), and $\rm Si\sb{1-x}Ge\sb{x}(001)$ films deposited on Si(001)2...
Low-temperature epitaxial growth of undoped and doped Si1-xGex films on the Si(100) surface at 550°C...
Although the growth mechanism of the CVD of polysilicon from silane has been extensively studied for...
A phenomenological model is proposed to explain quantitatively the interesting compositional depende...
Low-temperature Si and Ge CVD processing was investigated under the cleanest possible reaction envir...
By means of first-principles calculations we studied the decomposition pathways of SiH₃ on Ge(100) a...
Si and Ge epitaxial growth from disilane and germane in a gas-source molecular beam epitaxy (GSMBE) ...
The Si-Si, Ge-Ge, Si-Ge, Si-H, and Ge-H bonds are analyzed through $\rm Si\sb2H\sb6$ and $\rm Ge\sb2...
A three-parameter local hot spot model of gas-surface reactivity is employed to analyze and predict ...
[[abstract]]Total energy calculations based on density functional theory (DFT) with generalized grad...
Using reflection-high-energy-electron-diffraction intensity oscillations the growth rate of Si1-xGex...
The implementation of detailed surface kinetic mechanisms describing the thin film growth dynamics i...
The density functional theory method is used to explore the mechanism of dissociative adsorption of ...
The two-site exchange model for surface segregation is extended to take account of the site-blocking...
The effect chlorine addition to the gas mixture has on the surface chemistry in the chemical vapour ...
The growth rate R of Si(001), Ge(001), and $\rm Si\sb{1-x}Ge\sb{x}(001)$ films deposited on Si(001)2...
Low-temperature epitaxial growth of undoped and doped Si1-xGex films on the Si(100) surface at 550°C...
Although the growth mechanism of the CVD of polysilicon from silane has been extensively studied for...
A phenomenological model is proposed to explain quantitatively the interesting compositional depende...
Low-temperature Si and Ge CVD processing was investigated under the cleanest possible reaction envir...
By means of first-principles calculations we studied the decomposition pathways of SiH₃ on Ge(100) a...
Si and Ge epitaxial growth from disilane and germane in a gas-source molecular beam epitaxy (GSMBE) ...
The Si-Si, Ge-Ge, Si-Ge, Si-H, and Ge-H bonds are analyzed through $\rm Si\sb2H\sb6$ and $\rm Ge\sb2...
A three-parameter local hot spot model of gas-surface reactivity is employed to analyze and predict ...
[[abstract]]Total energy calculations based on density functional theory (DFT) with generalized grad...
Using reflection-high-energy-electron-diffraction intensity oscillations the growth rate of Si1-xGex...
The implementation of detailed surface kinetic mechanisms describing the thin film growth dynamics i...
The density functional theory method is used to explore the mechanism of dissociative adsorption of ...
The two-site exchange model for surface segregation is extended to take account of the site-blocking...
The effect chlorine addition to the gas mixture has on the surface chemistry in the chemical vapour ...
The growth rate R of Si(001), Ge(001), and $\rm Si\sb{1-x}Ge\sb{x}(001)$ films deposited on Si(001)2...