Investigations on photoluminescence properties of (11 (2) over bar0) GaN grown on (1 (1) over bar 02) Al2O3 substrate by metalorganic chemical-vapor deposition are reported. Several emission lines not reported before are observed at low temperature. The sharp peak at 3.359 eV is attributed to the exciton bound to the neutral acceptor. Another peak at 3.310 eV represents a free-to-bound, probably a free electron-to-acceptor, transition. The 3.241 and 3.170 eV lines are interpreted as phonon replica lines of the 3.310 eV line. The phonon energy is 70 meV, consistent with the energy of transverse optical E-1 phonon. The optical properties of the lines are analyzed. (C) 2003 American Institute of Physics
AlGaN and GaN films were grown on (11 (2) over bar0) Al2O3 Substrates at elevated temperatures by al...
Photoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperatu...
We report the investigation of temperature and excitation power dependence in photoluminescence spec...
Two Mg-doped GaN films with different doping concentrations were grown by a metalorganic chemical va...
GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were fou...
Low temperature photoluminescence (PL) properties of InGaN films grown on (0 1 (1) over bar 2) Al2O3...
Photoluminescence measurements have been performed on cubic GaN films with carrier concentration as ...
Photoluminescence excitation (PLE) spectra were measured for the light emissions of 370nm, 590nm and...
The optical properties of cubic GaN films have been investigated in the temperature range of 10-300 ...
Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT...
The aim of this thesis was to investigate the properties of GaN and related compounds using photolum...
The luminescent properties of GaN thin films grown by pulsed laser deposition have been studied to u...
In this study, an attempt was made to analyze the luminescence between 3.36 eV and 3.41 eV of nid he...
A luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been ten...
The mechanism of room-temperature optical transitions in a Mg-doped cubic GaN epilayer grown on GaAs...
AlGaN and GaN films were grown on (11 (2) over bar0) Al2O3 Substrates at elevated temperatures by al...
Photoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperatu...
We report the investigation of temperature and excitation power dependence in photoluminescence spec...
Two Mg-doped GaN films with different doping concentrations were grown by a metalorganic chemical va...
GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were fou...
Low temperature photoluminescence (PL) properties of InGaN films grown on (0 1 (1) over bar 2) Al2O3...
Photoluminescence measurements have been performed on cubic GaN films with carrier concentration as ...
Photoluminescence excitation (PLE) spectra were measured for the light emissions of 370nm, 590nm and...
The optical properties of cubic GaN films have been investigated in the temperature range of 10-300 ...
Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT...
The aim of this thesis was to investigate the properties of GaN and related compounds using photolum...
The luminescent properties of GaN thin films grown by pulsed laser deposition have been studied to u...
In this study, an attempt was made to analyze the luminescence between 3.36 eV and 3.41 eV of nid he...
A luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been ten...
The mechanism of room-temperature optical transitions in a Mg-doped cubic GaN epilayer grown on GaAs...
AlGaN and GaN films were grown on (11 (2) over bar0) Al2O3 Substrates at elevated temperatures by al...
Photoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperatu...
We report the investigation of temperature and excitation power dependence in photoluminescence spec...