The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, abo...
ZnS<sub>1-x</sub>Te<sub>x</sub> (0≤x≤1) single-crystal alloy films were grown on GaAs and Si substra...
ZnTe1-xSx epitaxial layers grown on GaAs by molecular-beam epitaxy were studied by photoluminescence...
X-ray photoelectron spectroscopy (XPS) was used to study the photoelectron emission of a relatively ...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
ZnS1-xTex (0.02less than or equal toxless than or equal to0.3) alloys are studied by photoluminescen...
ZnS:Te epilayers with Te concentration from 0.5% to 3.1% were studied by photoluminescence under hyd...
The photoluminescence of four epitaxial ZnS: Te samples with Te concentration from 0.5% to 3.1% was ...
ZnS:Te epilayers with Te concentration from 0.5% to 3.1% were studied by photoluminescence under hyd...
We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pres...
We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pres...
The pressure behavior of photoluminescence emission of ZnS<sub>1-x</sub>Te<sub>x</sub>(0.02≤x≤0.3) m...
The recombination dynamics of localized exciton in ZnS1-x Te-x ternary alloys has been investigated ...
Isoelectronic center (IEC) forming deep level states in the forbidden gap can strongly enhance light...
The recombination kinetics of Te isoelectronic centers in ZnS1-xTex (0.0065 less than or equal to x ...
ZnS<sub>1-x</sub>Te<sub>x</sub> (0≤x≤1) single-crystal alloy films were grown on GaAs and Si substra...
ZnTe1-xSx epitaxial layers grown on GaAs by molecular-beam epitaxy were studied by photoluminescence...
X-ray photoelectron spectroscopy (XPS) was used to study the photoelectron emission of a relatively ...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
ZnS1-xTex (0.02less than or equal toxless than or equal to0.3) alloys are studied by photoluminescen...
ZnS:Te epilayers with Te concentration from 0.5% to 3.1% were studied by photoluminescence under hyd...
The photoluminescence of four epitaxial ZnS: Te samples with Te concentration from 0.5% to 3.1% was ...
ZnS:Te epilayers with Te concentration from 0.5% to 3.1% were studied by photoluminescence under hyd...
We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pres...
We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pres...
The pressure behavior of photoluminescence emission of ZnS<sub>1-x</sub>Te<sub>x</sub>(0.02≤x≤0.3) m...
The recombination dynamics of localized exciton in ZnS1-x Te-x ternary alloys has been investigated ...
Isoelectronic center (IEC) forming deep level states in the forbidden gap can strongly enhance light...
The recombination kinetics of Te isoelectronic centers in ZnS1-xTex (0.0065 less than or equal to x ...
ZnS<sub>1-x</sub>Te<sub>x</sub> (0≤x≤1) single-crystal alloy films were grown on GaAs and Si substra...
ZnTe1-xSx epitaxial layers grown on GaAs by molecular-beam epitaxy were studied by photoluminescence...
X-ray photoelectron spectroscopy (XPS) was used to study the photoelectron emission of a relatively ...