Alloy states in dilute GaAs1-xNx alloys (x < 1%)

Luo XD
Huang JS
Xu ZY
Yang CL
Liu J
Ge WK
Zhang Y
Mascarenhas A
Xin HP
Tu CW
Luo XD,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices Microstruct,Beijing 100083,Peoples R China.

Publication date

January 2003

Abstract

A set of GaAs1-xNx samples with small nitrogen composition (x<1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and time-resolved PL. In the PL spectra, an extra transition located at the higher-energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the PL peak was identified as a transition of alloy band edge-related recombination in GaAsN. The PL dynamics further confirms its intrinsic nature as being associated with the band edge rather than N-related bound states. (C) 2003 American Institute of Physics

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Alloy states in dilute GaAs1-xNx alloys (x < 1%)

Abstract

Extracted data

Alloy states in dilute GaAs1-xNx alloys (x < 1%)

Abstract

Extracted data

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