X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control of the epilayer thickness and composition. Intersubband absorption from the whole structure of the QC laser is used to monitor the wavelength of the QC laser and the material quality. Path for growth of high-quality InP-based InGaAs/InAlAs quantum cascade laser material is realized. The absorption between two quantized energy levels is achieved at similar to4.7 mum. Room temperature laser action is achieved at lambda approximate to 5.1 - 5.2 mum. For some devices, if the peak output power is kept at 2 mW, quasi-continuous wave operation at room temperature can persist for more than I It. (C) 2002 Elsevier Science B.V. All rights reserved
A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)A...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Double X-ray diffraction has been used to investigate InGaAs/InAlAs quantum cascade (QC) laser grown...
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) materi...
Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical powe...
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
We report the first demonstration of InGaAs/AlAsSb/InP quantum cascade lasers. Laser characteristics...
Room temperature operation is an important criterion for high performance of quantum cascade lasers....
The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The ...
Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs su...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)A...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Double X-ray diffraction has been used to investigate InGaAs/InAlAs quantum cascade (QC) laser grown...
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) materi...
Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical powe...
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
We report the first demonstration of InGaAs/AlAsSb/InP quantum cascade lasers. Laser characteristics...
Room temperature operation is an important criterion for high performance of quantum cascade lasers....
The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The ...
Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs su...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)A...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...