Double X-ray diffraction has been used to investigate InGaAs/InAlAs quantum cascade (QC) laser grown on InP substrate by molecule beam epitaxy, by means of which, excellent lattice matching, the interface smoothness, the uniformity of the thickness and the composition of the epilayer are disclosed. What is more, these results are in good agreement with designed value. The largest lattice mismatch is within 0.18% and the intersubband absorption wavelength between two quantized energy levels is achieved at about lambda = 5.1 mum at room temperature. At 77 K, the threshold density of the QC laser is less than 2.6 kA/cm(2) when the repetition rate is 5 kHz and the duty cycle is 1%. (C) 2003 Elsevier Science B.V. All rights reserved
We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP ...
We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum casca...
Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs su...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control...
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) materi...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...
The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The ...
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...
We report the first demonstration of InGaAs/AlAsSb/InP quantum cascade lasers. Laser characteristics...
Short wavelength (lambda < 5 mu m) quantum cascade lasers are of current interest as they operate in...
Molecular beam epitaxial growth of quaternary barrier GaInAs/AlGaAsSb quantum cascade lasers grown l...
The route to grow InP-based heteroepitaxial structure for quantum cascade laser by molecular beam ep...
We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP ...
We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum casca...
Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs su...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control...
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) materi...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...
The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The ...
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...
We report the first demonstration of InGaAs/AlAsSb/InP quantum cascade lasers. Laser characteristics...
Short wavelength (lambda < 5 mu m) quantum cascade lasers are of current interest as they operate in...
Molecular beam epitaxial growth of quaternary barrier GaInAs/AlGaAsSb quantum cascade lasers grown l...
The route to grow InP-based heteroepitaxial structure for quantum cascade laser by molecular beam ep...
We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP ...
We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum casca...
Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs su...