Add to ORKGThis paper reports that lnAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm(2) has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope
The authors report the growth by rf-plasma assisted molecular beam epitaxy of AlN/GaN/AlN resonant t...
The purpose of this work is to determine the potential and capability of double barrier resonant tun...
[[abstract]]In doping and incorporation in the barrier layers of AlGaAs/GaAs double-barrier resonant...
We have fabricated In_0.53Ga_0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridg...
We have investigated the dependence of the performance characteristics of In0.52 Al0.48As/ In0.53 Ga...
6 páginas, 3 figuras.p++/n++ InP tunnel diodes have been fabricated for the first time on InP and Si...
We have studied the epitaxial growth and electrical performance of Al-free, GaAs-based, resonant tun...
This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and...
A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fab...
A1GaAs/1nGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (R...
An InP/ln₀.₅₃Ga₀.₄₇As resonant tunnelling bipolar transistor with double heterojunction grown by mol...
Semiconductor heterostructures and their implementation into electronic and photonic devices have ha...
Tunneling devices in combination with transistors offer a way to extend the performance of existing ...
We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective a...
This paper studies the dependence of I - V characteristics on quantum well widths in AlAs/In0.53Ga0....
The authors report the growth by rf-plasma assisted molecular beam epitaxy of AlN/GaN/AlN resonant t...
The purpose of this work is to determine the potential and capability of double barrier resonant tun...
[[abstract]]In doping and incorporation in the barrier layers of AlGaAs/GaAs double-barrier resonant...
We have fabricated In_0.53Ga_0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridg...
We have investigated the dependence of the performance characteristics of In0.52 Al0.48As/ In0.53 Ga...
6 páginas, 3 figuras.p++/n++ InP tunnel diodes have been fabricated for the first time on InP and Si...
We have studied the epitaxial growth and electrical performance of Al-free, GaAs-based, resonant tun...
This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and...
A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fab...
A1GaAs/1nGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (R...
An InP/ln₀.₅₃Ga₀.₄₇As resonant tunnelling bipolar transistor with double heterojunction grown by mol...
Semiconductor heterostructures and their implementation into electronic and photonic devices have ha...
Tunneling devices in combination with transistors offer a way to extend the performance of existing ...
We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective a...
This paper studies the dependence of I - V characteristics on quantum well widths in AlAs/In0.53Ga0....
The authors report the growth by rf-plasma assisted molecular beam epitaxy of AlN/GaN/AlN resonant t...
The purpose of this work is to determine the potential and capability of double barrier resonant tun...
[[abstract]]In doping and incorporation in the barrier layers of AlGaAs/GaAs double-barrier resonant...