Add to ORKGA passively Q-switched and mode-locked diode-pumped Nd:GdVO4 laser was demonstrated using a low-temperature-grown GaAs wafer (LT-GaAs) as an intracavity saturable absorber. The maximal Q-switched mode-locked average output power was 750 mW with the Q-switched envelop having a repetition rate of 167 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 790 MHz
A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency doubled c-cut Nd:GdVO4/...
By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and ...
A diode-pumped GaAs-passively-Q-switched intracavity-frequency-doubled Nd:YVO4/YVO4 green laser wit...
A diode-pumped passively Q-switched mode-locked (QML) Nd:GdVO4 laser with a low temperature GaAs (LT...
Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope d...
Low temperature GaAs (LT-GaAs) was successfully grown at the temperature of 550 degrees C by metal o...
The generation of passively Q-switched mode-locking operation with 100% modulation depth has been ob...
We have demonstrated a passively Q-switched and mode-locked Nd:YVO4 laser with an intracavity compos...
We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:...
Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope ...
Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope ...
Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using...
We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5V...
We report a diode-end-pumped passively Q-switched Nd:GdVO4 laser operating at 1.06 mu m with In0.25G...
The objective of this researchis-to develop a compact and economical Q-switched diode-pumped Nd:YV04...
A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency doubled c-cut Nd:GdVO4/...
By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and ...
A diode-pumped GaAs-passively-Q-switched intracavity-frequency-doubled Nd:YVO4/YVO4 green laser wit...
A diode-pumped passively Q-switched mode-locked (QML) Nd:GdVO4 laser with a low temperature GaAs (LT...
Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope d...
Low temperature GaAs (LT-GaAs) was successfully grown at the temperature of 550 degrees C by metal o...
The generation of passively Q-switched mode-locking operation with 100% modulation depth has been ob...
We have demonstrated a passively Q-switched and mode-locked Nd:YVO4 laser with an intracavity compos...
We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:...
Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope ...
Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope ...
Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using...
We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5V...
We report a diode-end-pumped passively Q-switched Nd:GdVO4 laser operating at 1.06 mu m with In0.25G...
The objective of this researchis-to develop a compact and economical Q-switched diode-pumped Nd:YV04...
A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency doubled c-cut Nd:GdVO4/...
By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and ...
A diode-pumped GaAs-passively-Q-switched intracavity-frequency-doubled Nd:YVO4/YVO4 green laser wit...