Add to ORKGA systematic investigation is made on the influence of the longitudinal and transverse period distributions of quantum dots on the elastic strain field. The results showed that the effects of the longitudinal period and transverse period on the strain field are just opposite along the direction of center-axis of the quantum dots, and under proper conditions, both effects can be eliminated. The results demonstrate that in calculating the effect of the strain field on the electronic structure, one must take into account the quantum dots period distribution, and it is inadequate to use the isolated quantum dot model in simulating the strain field
In order to analyze the strain distribution of InAs/GaAs quantum dot in a pyramidal geometry, the tr...
An array of semiconductor quantum dots is studied computationally using an approach that couples lin...
The effects of strain and spin–orbit interaction in self-assembled lens--shaped InAs/GaAs quantum do...
Abstract: Strain distribution in a pyramidal InAs/GaAs quantum dot is investigated. The strain fiel...
The strain effect on the band structure of InAs/GaAs quantum dots has been investigated. 1 mu m thic...
The strain distribution and band profile in triply stacked InAs/GaAs quantum dots with dot spacing o...
Abstract: The effect of mechanical strain on the quantum confinement properties of quantum dots is a...
On the basis of the finite element approach, we systematically investigated the strain field distrib...
A theoretical model was developed using GreenˇŚs function with an anisotropic elastic tensor to stud...
Extensive research over the past several years has revealed graded composition and strong atomistic ...
We presented an atomistic investigation of the influence of strain on the electronic properties of q...
We study strain distribution inside and outside an arbitrarily-shaped quantum dot (QD) buried in an ...
Strain potentials, potential profiles, and electronic subband energies of InAs/GaAs coupled double q...
We have studied a GaAs/AlAs quantum dot array using reciprocal space mapping around the (004) and (I...
The stress and strain fields in self-organized growth coherent quantum dots (QD) structures are inve...
In order to analyze the strain distribution of InAs/GaAs quantum dot in a pyramidal geometry, the tr...
An array of semiconductor quantum dots is studied computationally using an approach that couples lin...
The effects of strain and spin–orbit interaction in self-assembled lens--shaped InAs/GaAs quantum do...
Abstract: Strain distribution in a pyramidal InAs/GaAs quantum dot is investigated. The strain fiel...
The strain effect on the band structure of InAs/GaAs quantum dots has been investigated. 1 mu m thic...
The strain distribution and band profile in triply stacked InAs/GaAs quantum dots with dot spacing o...
Abstract: The effect of mechanical strain on the quantum confinement properties of quantum dots is a...
On the basis of the finite element approach, we systematically investigated the strain field distrib...
A theoretical model was developed using GreenˇŚs function with an anisotropic elastic tensor to stud...
Extensive research over the past several years has revealed graded composition and strong atomistic ...
We presented an atomistic investigation of the influence of strain on the electronic properties of q...
We study strain distribution inside and outside an arbitrarily-shaped quantum dot (QD) buried in an ...
Strain potentials, potential profiles, and electronic subband energies of InAs/GaAs coupled double q...
We have studied a GaAs/AlAs quantum dot array using reciprocal space mapping around the (004) and (I...
The stress and strain fields in self-organized growth coherent quantum dots (QD) structures are inve...
In order to analyze the strain distribution of InAs/GaAs quantum dot in a pyramidal geometry, the tr...
An array of semiconductor quantum dots is studied computationally using an approach that couples lin...
The effects of strain and spin–orbit interaction in self-assembled lens--shaped InAs/GaAs quantum do...