Study of GaN epilayers growth on freestanding Si cantilevers

Chen J
Wang X
Wu AM
Zhang B
Wu YX
Zhu JJ
Yang H
Chen, J, Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China. E-mail Address: jchen@mail.sim.ac.cn

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Publication date

January 2010

DOI

10.1016/j.sse.2009.10.008

ISSN

0038-1101

Citation count (estimate)

Abstract

Five-micron thick freestanding Si cantilevers were fabricated on bulk Si (1 1 1) substrates with surface/bulk micromachining (SBM) process. Then 1-mu m thick GaN layers were deposited on the Si cantilevers by metal-organic chemical vapor deposition (MOCVD). Epilayers on cantilever areas were obtained crack-free, and the photoluminescence (PL) spectra verified the stress reduction and better material quality in these suspended parts of GaN. Back sides of the cantilevers were also covered with GaN layers, which prevented the composite beams from bending dramatically. This paper had proved the feasibility of integrating high-quality GaN epilayers with Si micromechanical structures to realize GaN-based micro electro-mechanical system (MEMS). (C...