High-power strain-compensated In1-xGaxAs/ln(1-y)Al(y)As quantum cascade lasers (lambda similar to 5.5 mu m) are demonstrated. Peak power at least 1.2W per facet for a 32 mu mx2mm uncoated laser stored in ambient condition for 240 days, is obtained at 80 K. Considering the collection efficiency of 60%, the actual output power is 4W at this temperature
Quantum cascade lasers emitting at lambda about 5 µm based on different active region designs are in...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Room temperature operation is an important criterion for high performance of quantum cascade lasers....
We develop 5.5-mu m InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InG...
We present a detailed study of lambda similar to 9.75 mu m GaAs/AIGaAs quantum cascade lasers. For a...
A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)A...
We report low-threshold high-temperature operation of 7.4 mu m strain-compensated InGaAs/InAlAs quan...
High temperature pulsed operation of quantum cascade lasers is reported. At 425K and 8.4 mu m wavele...
Quantum cascade (QC) lasers emitting at lambda approximate to 8 mu m with a power performance equal ...
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
We report on the material growth and device performance characterization of a strain-compensated In0...
High duty cycle operation of quantum cascade superlattice lasers with graded superlattice active reg...
In this work, we demonstrate the features of a two-stage epitaxial growth technique and show the res...
High performance of InP-based quantum cascade lasers emitting at $\lambda$ ~ 9$\mu$m are reported. T...
Quantum cascade lasers emitting at lambda about 5 µm based on different active region designs are in...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Room temperature operation is an important criterion for high performance of quantum cascade lasers....
We develop 5.5-mu m InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InG...
We present a detailed study of lambda similar to 9.75 mu m GaAs/AIGaAs quantum cascade lasers. For a...
A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)A...
We report low-threshold high-temperature operation of 7.4 mu m strain-compensated InGaAs/InAlAs quan...
High temperature pulsed operation of quantum cascade lasers is reported. At 425K and 8.4 mu m wavele...
Quantum cascade (QC) lasers emitting at lambda approximate to 8 mu m with a power performance equal ...
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
We report on the material growth and device performance characterization of a strain-compensated In0...
High duty cycle operation of quantum cascade superlattice lasers with graded superlattice active reg...
In this work, we demonstrate the features of a two-stage epitaxial growth technique and show the res...
High performance of InP-based quantum cascade lasers emitting at $\lambda$ ~ 9$\mu$m are reported. T...
Quantum cascade lasers emitting at lambda about 5 µm based on different active region designs are in...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Room temperature operation is an important criterion for high performance of quantum cascade lasers....