Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature
- Sun, Z (Sun, Z.)
- Yang, XD (Yang, X. D.)
- Sun, BQ (Sun, B. Q.)
- Ji, Y (Ji, Y.)
- Zhang, SY (Zhang, S. Y.)
- Ni, HQ (Ni, H. Q.)
- Niu, ZC (Niu, Z. C.)
- Xu, ZY (Xu, Z. Y.)
- Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: sz3288@red.semi.ac.cn
- ji_ym@mail.sic.ac.cn
- zyxu@red.semi.ac.cn
DOIAbstract
Temperature dependence of optical properties of GaInNAs/GaAs quantum wells (QWs) has been studied by photoluminescence (PL) and time-resolved PL. A rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results strongly suggest that the non-radiative recombination process plays a very important role at low temperature. In the TRPL measurement the shape of the PL decay curve shows significant difference under different excitation powers. It is attributed to the different involvement of non-radiative recombination in the overall recombination process. The TRPL data are well fitted with the rate equation involving both the radiative and non-radiative recombination. (c) 2006 Elsevier B.V. Al...
Add to ORKG